N25Q128A11BSF40G Allicdata Electronics
Allicdata Part #:

N25Q128A11BSF40G-ND

Manufacturer Part#:

N25Q128A11BSF40G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ 16SO
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 108MHz ...
DataSheet: N25Q128A11BSF40G datasheetN25Q128A11BSF40G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO
Description

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The N25Q128A11BSF40G belongs to Memory with high capacity, and is widely used in many fields. It is a type of flash memory with an external memory interface to store non-volatile data. The use of N25Q128A11BSF40G can be found in many applications, such as mobile phone, digital video recorder and so on. N25Q128A11BSF40G also has a working principle which can be understood as following.

N25Q128A11BSF40G consists of several memory cells, each of which contain a floating gate insulated by an oxide layer and a control gate used to control the memory cell. It works by manipulating the electrons stored in the floating gate. To read or write data to the N25Q128A11BSF40G, first a charge is applied to the gate of the cell, or "programmed", by flowing an electrical current in the opposite direction to the stored electrons. This charge will attract some of the electrons in the floating gate to the control gate. This process is known as programming, which is used to write the data.

To ‘read’ a bit of data, the electrical current is increased and the electrons in the floating gate naturally move toward the direction of the stronger current supplied. Then, the electrical current is converted into a logic signal, either ‘1’ or ‘0’, depending on whether the electrons have reached the control gate. The bit has now been ‘read’ from the memory. To erase data, the electrical current is reversed and the electrons in the floating gate are attracted away from the control gate, which erases the programmed data.

The N25Q128A11BSF40G is also a Non-Volatile Memory (NVM), which can retain the stored data when power is lost. The advantage of N25Q128A11BSF40G is that it has up to 128GB of storage space, which makes it suitable for storing large amount of data. In addition, it also has a high speed read and write speed, which suitable for applications that require fast data transfer.

In conclusion, N25Q128A11BSF40G is a type of flash memory and can be used in many applications such as mobile phone and digital video recorder, with up to 128GB of storage space and high speed read and write capabilities. It works by manipulating the electrons stored in the floating gate and can retain data when power is lost. N25Q128A11BSF40G is a non-volatile memory and is an excellent choice for applications that require large amounts of storage space and high speed data transfers.

The specific data is subject to PDF, and the above content is for reference

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