N25Q512A13GSFH0E

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The N25Q512A13GSFH0E is a type of non-volatile memory chip developed by the multinational semiconductor company, Micron Technology Inc. This memory chip is used for applications including code and data storage, and provides high speed, low power operation by utilizing a technology known as 3D silicon fabrication. The N25Q512A13GSFH0E is capable of addressing up to 512 megabytes of storage, making it one of the fastest and most reliable memory chips on the market today.

The N25Q512A13GSFH0E utilizes a three-dimensional fabrication technique. This technique produces a very small chip with multiple tiers of active transistors and circuit elements. This creates a much denser and faster memory chip than what would be available with the traditional two-dimensional manufacturing process. The N25Q512A13GSFH0E is capable of accessing up to 512 megabytes of storage due to its 3D fabrication. The chip uses an 8-bit, dual-channel data bus to communicate with the processor, and is also capable of utilizing error correction protocol (ECP) for data integrity.

The N25Q512A13GSFH0E is designed to operate with a supply voltage range of 3.3V to 1.65V. The chip is also capable of providing low power operation through a process known as “power gating”, which reduces the amount of current required when the die is idle. The chip also provides a high-speed data transfer rate of up to 166MB/s and a maximum random access time of 6.25 ns.

The N25Q512A13GSFH0E has many applications where it can be used, including code and data storage. Its 3D fabrication design allows it to provide reliable data storage with a high capacity and high speed. The chip is also well suited for applications such as storage and retrieval of large datasets, mobile device design, embedded systems and industrial automation. Its low power consumption and high speed also make it a good choice for applications in the automotive and aerospace industries.

In conclusion, the N25Q512A13GSFH0E is a non-volatile memory chip with a large capacity, high speed and low power consumption. Its 3D fabrication process makes it a reliable and compact memory chip that is suitable for a variety of applications. It is also capable of utilizing error correction protocol (ECP) for data integrity, providing a highly reliable memory chip for its many applications.

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