Allicdata Part #: | N25Q064A13ESED0E-ND |
Manufacturer Part#: |
N25Q064A13ESED0E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M SPI 108MHZ 8SO |
More Detail: | FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 8... |
DataSheet: | N25Q064A13ESED0E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (16M x 4) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 8ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.209", 5.30mm Width) |
Supplier Device Package: | 8-SO W |
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The N25Q064A13ESED0E is a type of non-volatile memory device that is mainly used for mass storage applications. This type of memory device can store data. It has a wide operating voltage range and its maximum read/write speed is up to 50MHz. It is available in various packages and is widely used in embedded applications.
N25Q064A13ESED0E is a type of NOR flash memory. This type of memory technology uses memory cells which are electrically programmed to store data. The advantage of NOR flash memory over other types of non-volatile memory is that it can be directly read and written by CPUs. This makes it ideal for flash storage applications such as embedded systems and other embedded data storage applications.
The main application field of the N25Q064A13ESED0E memory device is embedded applications. It is widely used in the automotive industry, medical electronics, consumer electronics, and other application fields. The N25Q064A13ESED0E is particularly suitable for applications requiring large amounts of data storage with a minimum amount of power consumption.
The working principle of N25Q064A13ESED0E is relatively simple. It is an array of memory cells which are connected to circuit lines. The memory cells are programmed with data by applying current to the cells. When a current is applied, the electrons in the memory cell become positively charged and will remain in this state until power is shut off, allowing the data to be stored and retained even when the power is turned off.
The memory cells can also be read back by applying a voltage to them. When the voltage is applied, the electrons in the memory cell become negatively charged and can be read out by a special circuit. This reading process can be repeated multiple times, allowing the data to be continuously updated and stored.
The N25Q064A13ESED0E is a reliable and efficient nonvolatile memory device. It is widely used in embedded applications and can store large amounts of data in a small package with a minimum amount of power consumption. Its simple working principle makes it a great choice for embedded storage applications.
The specific data is subject to PDF, and the above content is for reference
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N25Q064A13ESED0G | Micron Techn... | -- | 1000 | IC FLASH 64M SPI 108MHZ 8... |
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