N25Q128A13ESEDFG

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	128Mb (32M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.209", 5.30mm Width)
Supplier Device Package:	8-SO W

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Introduction

N25Q128A13ESEDFG is an advanced memory technology from SGMICRO Corporation. It has a wide range of applications in different fields, from automotive electronics to data storage, and has become the backbone of many industries for its reliable and high capacity. It is a Non-Volatile Memory (NVM), which means it does not lose data when power is lost from the storage device. The N25Q128A13ESEDFG is a single-die, dual-interface serial NOR Flash, that combines the industry\'s highest performance and density, allowing customers to take advantage of the latest technologies. This article will discuss the different application fields that the N25Q128A13ESEDFG memory is designed for, as well as the working principle of this technology.

Applications

The N25Q128A13ESEDFG can be applied in a variety of areas and industries due to its several advantages. Firstly, the N25Q128A13ESEDFG has an extremely high storage capacity. It can store up to 128Mb of data, which is enough for a wide range of storage requirements. This makes it suitable for multi-application use in industries such as medical, automotive, and telecommunications.The N25Q128A13ESEDFG also has a low power consumption. This makes it an ideal choice for applications that require low power consumption such as automotive and IoT applications. Additionally, it also has a wide temperature range. This allows it to operate in harsh environments like aerospace, industrial, or military applications, where temperatures can vary greatly.The N25Q128A13ESEDFG memory has two interfaces, an SPI mode interface and a Quad SPI (QSPI) interface. This makes it suitable for a wide range of applications. The SPI mode allows for fast simultaneous data read and write operations, making it suitable for high speed applications such as video processing. The Quad SPI mode allows for applications that require even faster transfer rates, such as 3-D image processing or game consoles.Lastly, the N25Q128A13ESEDFG memory has an error correction feature which ensures data accuracy and reliability. This error correction feature is especially beneficial in medical and automotive applications, where data accuracy is of utmost importance. This feature allows for better data accuracy and accuracy of operation, even in the case of hostile environments.

Working Principle

The N25Q128A13ESEDFG memory uses a Non-Volatile Memory (NVM) Technology. This technology allows the data stored in the device to be retained even after power is removed from the storage device.The N25Q128A13ESEDFG memory utilizes two different interfaces, an SPI mode and a Quad SPI (QSPI) mode, both providing accelerated speeds relative to the Serial Peripheral Interface (SPI). The SPI mode uses a standard SPI interface with a Clock, Data Out (Tx), Data In (Rx), and select lines. It utilizes clock rates up to 75MHz and data rates up to 133MHz, allowing for fast read and write operations.The Quad SPI mode uses four data lines. The first two data lines are used for data read and write operations, while the last two data lines are used for additional protocol features. The Quad SPI supports clock rates up to 125MHz and data rates up to 200MHz. This allows for fast read and write operations, making it ideal for applications that require data to be transferred quickly and efficiently.The N25Q128A13ESEDFG memory has several onboard memory management features, such as auto-erasure and auto-program options. The auto-erasure feature allows the device to automatically erase data before the new data is written. This ensures that old data is not left behind, thus reducing the risk of data corruption. The auto-program feature allows the device to automatically program a given amount of data in a designated address. This feature enables efficient data storage and manipulation, allowing for improved performance and reliability.The N25Q128A13ESEDFG also uses an error correction feature which ensures data accuracy and reliability. It utilizes a checksum algorithm for data integrity, which ensures that only valid data is written in the memory. This feature helps to eliminate data corruption, thus ensuring data accuracy and reliability.To sum up, the N25Q128A13ESEDFG memory is a reliable and high performance storage technology. It is suitable for a wide range of applications and has several features, such as low power consumption, wide temperature range, dual interface support, and error correction capability, which makes it an ideal choice for many different applications.

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