N25Q008A11ESC40FS02 TR Allicdata Electronics
Allicdata Part #:

N25Q008A11ESC40FS02TR-ND

Manufacturer Part#:

N25Q008A11ESC40FS02 TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M SPI 108MHZ SOIC
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8) SPI 108MHz
DataSheet: N25Q008A11ESC40FS02 TR datasheetN25Q008A11ESC40FS02 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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The N25Q008A11ESC40FS02 TR is a serial non-volatile memory. It is also known as a flash memory chip, usually used for storage and transfer of data in digital devices. It has very high random access memory speed and is widely used in a variety of applications, from basic electronics to modern computing systems.

Types of N25Q008A11ESC40FS02 TR Memory Chips

The N25Q008A11ESC40FS02 TR is split up into two different types of flash memory chips: multi-layer cell (MLC) and single-level cell (SLC). MLC devices are faster, while SLC devices are more energy-efficient. Each type of memory has its own advantages and limits, so it is important to figure out what type of chip is best suited for the application.

N25Q008A11ESC40FS02 TR Application Fields

The N25Q008A11ESC40FS02 TR is mainly used in embedded applications, automotive, military and industrial applications, as well as for computer memory storage and for powering faster solid-state drives. The N25Q008A11ESC40FS02 TR can be used as a replacement for hard drive-based parallel NOR flash, providing increased performance and reliability. These chips are also used for embedded SD cards, USB thumb drives, and embedded memory for gaming controllers, video surveillance systems and other industrial applications.

Working Principle of N25Q008A11ESC40FS02 TR Memory Chips

Flash memory is divided into blocks, which contain individual sectors. Every sector is composed of sub-pages, and each page contains 64 bytes of data. The N25Q008A11ESC40FS02 TR chip has 32,768 pages, which provides a total storage capacity of up to 2MB. Every page must be erased before new data can be recorded; hence, when writing data, a sector is partially or completely rewritten in its entirety.

From a programming perspective, the N25Q008A11ESC40FS02 TR flash memory behaves like a random access memory (RAM) device. As a result, read and write operations can happen in any order without being dependent on the order of previous operations. This makes the N25Q008A11ESC40FS02 TR a good choice for applications that require frequent updates or block-level random access, as it offers fast write speeds.

The N25Q008A11ESC40FS02 TR also employs an enhanced write protection feature that prevents accidental overwriting of data. This built-in security feature makes the N25Q008A11ESC40FS02 TR an excellent choice for an industrial environment article that needs secure data storage.

Conclusion

The N25Q008A11ESC40FS02 TR is a versatile, high-speed and reliable flash memory chip that is perfect for a wide range of applications. Its ultra-fast random access speeds, enhanced write protection feature, and reduced power consumption make the N25Q008A11ESC40FS02 TR an ideal choice for embedded applications, military and industrial applications, and computer memory storage.

The specific data is subject to PDF, and the above content is for reference

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