N25Q128A31EF840E Allicdata Electronics
Allicdata Part #:

N25Q128A31EF840E-ND

Manufacturer Part#:

N25Q128A31EF840E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ 8VDFPN
More Detail: FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz ...
DataSheet: N25Q128A31EF840E datasheetN25Q128A31EF840E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (MLP8) (8x6)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The purpose of this article is to discuss the application field and working principle of the N25Q128A31EF840E, a type of memory.

Memory is an important component of any computer system as it is used to store data and enable communication between the processor and other components. There are many types of memory, each with its own unique characteristics and applications. One of these types is flash memory, which is extremely versatile, offering high storage density and fast data retrieval times.

The N25Q128A31EF840E is a type of flash memory that is commonly used in embedded systems, cell phones and other mobile applications. It is a non-volatile memory, meaning that it is capable of retaining data even when the power is turned off. This type of memory also offers a wide operating temperature range and is resistant to vibration and shock. Furthermore, it does not require an additional power source for operation.

The working principle of the N25Q128A31EF840E is akin to other types of flash memory. When data or commands are written to the device, they are first converted into floating gate MOS transistor cells, which are then placed in predetermined locations on the die. When the memory location is accessed, the cells are read and the data is retrieved from them. As the cells are non-volatile, the data remains intact even when the power is removed.

The N25Q128A31EF840E is an ideal memory solution for embedded systems, as it can be used for both code and data storage. It is a low power device, meaning that it does not require a large amount of current to operate, and it is also robust and reliable. In addition, it enables fast data retrieval times, and is suitable for high-end applications that require large data capacity.

In conclusion, the N25Q128A31EF840E is a type of non-volatile memory that is well suited to embedded systems, cell phones and other mobile applications. It offers high storage density and fast data retrieval times, and is a low-power and robust device. Furthermore, it works in a similar way to other types of flash memory, converting data into floating gate MOS transistor cells that are then stored in memory locations. This makes it an ideal memory solution for many kinds of applications.

The specific data is subject to PDF, and the above content is for reference

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