N25Q032A13EF4A0F TR Allicdata Electronics
Allicdata Part #:

N25Q032A13EF4A0FTR-ND

Manufacturer Part#:

N25Q032A13EF4A0F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M SPI 108MHZ 8UFDFPN
More Detail: FLASH - NOR Memory IC 32Mb (8M x 4) SPI 108MHz 8-...
DataSheet: N25Q032A13EF4A0F TR datasheetN25Q032A13EF4A0F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (8M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-UFDFPN (MLP8) (4x3)
Description

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Memory devices are integral components of any modern computer system. They provide storage for the full range of data and instructions that powers a computer’s operations. Memory devices come in different sizes, forms, and capacities. One such device is the N25Q032A13EF4A0F TR memory device. The N25Q032A13EF4A0F TR is a type of non-volatile, flash memory device. It can store data even when power has been cut off. It has a capacity of 32 Mbit and a four-byte addressable bus.

The N25Q032A13EF4A0F TR is primarily used to store instructions, data, and applications. It also provides fast access and can easily be programmed. It is used in different applications ranging from embedded systems to industrial controllers.

The N25Q032A13EF4A0F TR is a three-volt flash memory device. It operates using the single-voltage supply of up to 3.6 volts. Its pins are organized into two rows: A0-A7, and DQ0-DQ7. The device also has an output enable pin, a write protect pin, and a chip select pin. The device is capable of read and write operations at speeds of up to 80 MHz.

The N25Q032A13EF4A0F TR is designed to support some of the most advanced non-volatile memory applications. It has a write latency of 0.9µs, which is twice as fast as other similar devices. It also has a sector erase time of 10 ms and a page program time of 1.8 ms.

The N25Q032A13EF4A0F TR supports several features to ensure reliability. It has an error correction code (ECC) to reduce the risk of data corruption due to noise or other interferences. It also supports a suspend and resume operation, which allows the device to enter a low-power state when it is idle and wake up when needed.

The N25Q032A13EF4A0F TR provides reliability and speed, making it ideal for applications that require high data integrity and low latency. It is commonly used in medical equipment, smart energy systems, and industrial automation. It is also used in automotive and aerospace applications, providing robust performance and reliability.

In summary, the N25Q032A13EF4A0F TR is a type of non-volatile, flash memory device. It operates perfectly at 3.6 volts and has a capacity of 32 Mbit. It is capable of read and write operations at speeds of up to 80 MHz and has a write latency of 0.9µs. It is primarily used to store instructions, data, and applications, and is commonly used in applications that require high data integrity and low latency, such as medical equipment, smart energy systems, and industrial automation.

The specific data is subject to PDF, and the above content is for reference

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