N25Q064A13EW74ME

The N25Q064A13EW74ME memory is an integrated High-speed non-volatile memory unit used in computers, microprocessor-based systems and other digital applications. It is a non-volatile memory that retains information even when power is removed.

Application Field

The N25Q064A13EW74ME is an ideal choice for mission-critical data storage, with advantages for multiple platforms. It can withstand the harshest environmental conditions, supporting temperature ranges from -40°C to 85°C. It is ideal for embedded or remote applications where space is limited, or when storage capacity needs to be expanded.

The N25Q064A13EW74ME is used for both general-purpose and special-purpose applications, including industrial automation and control systems, portable electronics, automotive applications, medical equipment, digital single-lens reflex (DSLR) cameras, and test instruments.

Working Principle

The N25Q064A13EW74ME memory has been engineered to provide the highest read and write performance and quality. It uses a Multi-Level Cell (MLC) Flash technology, which stores data in multiple levels instead of just two, allowing the memory to store more data within the same amount of space. The memory\'s MLC technology significantly improves read and write performance, as well as reduces latency and power consumption.

In addition, the N25Q064A13EW74ME memory uses Error Correcting Code (ECC) to detect and correct errors that may occur during the storage and retrieval of data, providing extremely reliable data storage. ECC helps correct single and multi-bit errors that occur during data storage and retrieval, preventing data loss.

Finally, the N25Q064A13EW74ME memory adopts advanced wear-leveling algorithms that extend the life of the memory chips by distributing write operations evenly over the whole memory array. This algorithm is designed to minimize data loss due to cell wear and maximize performance.