N25Q064A13ESFH0F TR Allicdata Electronics

N25Q064A13ESFH0F TR Integrated Circuits (ICs)

Allicdata Part #:

N25Q064A13ESFH0FTR-ND

Manufacturer Part#:

N25Q064A13ESFH0F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 64M SPI 108MHZ 16SOP2
More Detail: FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 1...
DataSheet: N25Q064A13ESFH0F TR datasheetN25Q064A13ESFH0F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2
Description

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N25Q064A13ESFH0F TR is a type of non-volatile memory designed for a wide range of applications. It offers high-speed operation, small form factor, and low power consumption, making it suitable for a variety of applications. The N25Q064A13ESFH0F TR is a Quad-SPI-compatible Flash memory that supports the reliable, low latency, high-speed data transfer protocol. The memory chip is accessed via four select pins for address selection, providing fast access to the various memory block types. This chip has been designed for use in applications where data needs to be stored for long periods of time, including consumer electronics, industrial equipment, automotive systems, and medical devices.

The N25Q064A13ESFH0F TR\'s working principle is based on the fact that magnetic charges can be stored and magnetized in the memory cells. Each memory cell consists of three transistors and one ferroelectric material layer. When a write operation is initiated, the data is written onto the ferroelectric material layer and stored there. When a read operation is initiated, the ferroelectric material layer is magnetized by an external field and the stored data is read by the transistors. This process enables non-volatile storage, meaning that even when the power is turned off, the data remains intact.

The N25Q064A13ESFH0F TR is often used in applications that require high-speed and reliable data transfer, such as industrial automation, data logging, and medical equipment. It can also be used in automotive applications, where its small form factor makes it an ideal choice for embedded systems. Some of the applications that can benefit from the use of this type of memory include automotive infotainment systems, audio/video systems, electronic instrument clusters, sensors, and networked automotive systems.

For industrial applications, the N25Q064A13ESFH0F TR offers reliable data storage and fast access times. It is also an ideal choice for applications requiring low power consumption and its small form factor makes it suitable for embedded systems. The chip can be used in factory automation, data logging, and process control systems. Additionally, it is used in smart meters and other industrial equipment that require high-speed non-volatile memory for applications such as data logging and monitoring.

The N25Q064A13ESFH0F TR is a versatile memory chip that is suited to a wide range of applications. It offers reliable data storage, fast access times, and low power consumption, making it an ideal choice for industrial and automotive applications as well as for embedded systems. The chip is suitable for applications requiring high-speed and reliable data transfer, making it an attractive option for customers who are looking for a reliable, low power memory solution.

The specific data is subject to PDF, and the above content is for reference

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