N25Q512A81GSF40G

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (128M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	1.7 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:	16-SOP2

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Introduction

The N25Q512A81GSF40G is a memory used in a wide range of applications. It is a multi-bit memory device, enabling fast read/write operations and allowing for a large amount of data to be stored and accessed. The N25Q512A81GSF40G utilizes non-volatile NAND Flash memory technology for data storage. This technology allows for rapid and reliable data access, as well as the ability to store information and data for long periods of time without power.

Application Field

The N25Q512A81GSF40G is used in a wide range of applications, including consumer electronics, automotive, aerospace, industrial and medical applications. Consumer electronics products such as cameras, smartphones, tablets, and other devices need reliable and fast storage solutions, and the N25Q512A81GSF40G is ideal for these applications. Automotive, aerospace and industrial applications require reliable and robust storage solutions, and the N25Q512A81GSF40G is suitable in these cases as well. In medical applications, it can be used to store medical data securely, as well as enable applications such as implantable medical devices.

Working Principle

The N25Q512A81GSF40G is a non-volatile NAND flash memory device. It consists of multiple NAND memory cells, which are organized in a rectangular array. Each cell can store 1 bit of data. The memory is organized into several pages and blocks, each containing multiple cells. Each page can store up to 2048 bits of data, and each block can store up to 256 pages.The N25Q512A81GSF40G uses SLC (single-level cell) technology, which allows each memory cell to store one bit of data. This technology enables faster read/write operations, as well as improved reliability and durability. The device also features Advanced Error Correction Code (ECC), which helps to reduce errors during volatile memory operations and transfers.To read or write data to the device, the user calls an appropriate read/write command, specifying either a page or an address. The appropriate page or address is then read or written to, depending on the command. When an erase command is sent, a single page or an entire block can be erased.

Conclusion

The N25Q512A81GSF40G is a memory device designed for a wide range of applications. It uses non-volatile NAND Flash memory technology and utilizes SLC technology for improved read/write performance and reliability. The device also features Advanced Error Correction Code (ECC) to reduce errors during volatile memory operations and transfers.

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