N25Q128A13BSF40E Allicdata Electronics
Allicdata Part #:

N25Q128A13BSF40E-ND

Manufacturer Part#:

N25Q128A13BSF40E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ 16SO
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 108MHz ...
DataSheet: N25Q128A13BSF40E datasheetN25Q128A13BSF40E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

N25Q128A13BSF40E is a kind of well-known memory component, which is widely used in consumer and communication applications. It is based on a 4KB single-application memory paper, allowing users to store data up to 32Mb in size. The component is easy to use and reliable, making it a good choice for applications that require high speed, low power, and high reliability.

The main feature of N25Q128A13BSF40E is its high-speed read/write and programmable memory. It is capable of reading and storing up to 32Mb of data, offering a high-speed serial bus interface. Additionally, the component has a wide range of storage capabilities and can work with a range of operating systems. It is also capable of performing multi-level operations and can be used for data storage and data analysis.

In addition to its fast read/write speeds, N25Q128A13BSF40E is also capable of performing additional operations that make it a great choice for many applications. These operations include refresh, erase, write, and re-write. The refresh operation ensures efficient data retention by consolidating redundant data into a single line. Erase operations involve removing data from a specific location while write and re-write operations allow users to copy and store new data.

When it comes to the working principle of N25Q128A13BSF40E, it is based on a shared-line bus structure which is used for all communication between the processor and the memory component. This bus structure is capable of providing high-speed access to the memory and is designed to ensure reliability in both read and write operations. Additionally, the component also features a low power dissipation, which ensures efficient power usage and prevents overheating of the device.

N25Q128A13BSF40E is a great choice for many applications and is widely used in a range of consumer, communication, and industrial products. The component is equipped with a variety of features and capabilities, allowing users to easily integrate it into their systems. Furthermore, the component is also robust and reliable, providing users with a high-quality, cost-effective solution for their applications.

The specific data is subject to PDF, and the above content is for reference

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