N25Q064A11E5340F TR

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N25Q064A11E5340F TR is a 64 Mbit Serial NOR Flash memory with the standard SPI protocol, a 3 V operating voltage, and scalable 1.8, 2.5 and 3.3 V write enable voltages. It is part of the family of solutions that are optimized for the industrial Internet of Things (IIoT), and it provides the semiconductor industry with the most advanced Serial NOR Flash memory technology with 11 enhanced features and functionality.

Application Fields of N25Q064A11E5340F TR

The N25Q064A11E5340F TR supports a large number of applications across industrial and consumer markets, including:

• Industrial building automation
• Factory automation and controls
• Automation of industrial and manufacturing processes
• Motor control
• Medical systems

In addition, the N25Q064A11E5340F TR is also ideally suited for use in a range of consumer electronics, such as digital cameras and personal media players.

Working Principle of N25Q064A11E5340F TR

The N25Q064A11E5340F TR employs a memory array with a single row of memory cells. Each cell consists of one gate, four data storage transistors, and one pass transistor. The four data storage transistors provide the data storage capability of the memory cell. A word line is provided to turn on the cell’s pass transistor and enable the memory cell to be read or written. A single bit line connected to the cell’s gate provides a path between the cell and the outside world.

When a voltage is applied to the cell’s bit line, it will turn on the cell’s pass transistor and the data stored in the cell’s four data storage transistors will be output on the bit line. When no voltage is applied, the cell is in an inactive state. Thus, the data stored in the memory cell can be read or written using a logic circuit driven by a word line.

The N25Q064A11E5340F TR also supports a two-level interface that allows two devices to communicate with each other over a single bus. This allows for fast data transfer between the two devices and for simultaneous writing and reading of data.

The N25Q064A11E5340F TR is an industrial-grade memory device, meaning it has been designed and tested to withstand temperatures ranging from -40°C to +125°C. The memory device also offers a high cycling endurance, meaning it is capable of performing up to 10,000 write/erase cycles, making it suitable for applications that require a high level of reliability. In addition to its high cycling endurance, the N25Q064A11E5340F TR offers a wide voltage range, allowing it to operate at 1.8V, 2.5V and 3.3V write enable voltages.

Conclusion

In conclusion, the N25Q064A11E5340F TR is a 64 Mbit Serial NOR Flash memory that is optimized for the industrial Internet of Things (IIoT). It supports a wide range of industrial and consumer applications, and it offers a high cycling endurance and a wide voltage range, making it suitable for applications that require a high level of reliability. It utilizes a two-level interface to allow two devices to communicate with each other over a single bus.

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