N25Q064A13EF840E Allicdata Electronics
Allicdata Part #:

N25Q064A13EF840E-ND

Manufacturer Part#:

N25Q064A13EF840E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 64M SPI 108MHZ 8VDFPN
More Detail: FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 8...
DataSheet: N25Q064A13EF840E datasheetN25Q064A13EF840E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (MLP8) (8x6)
Base Part Number: N25Q064
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

N25Q064A13EF840E is the memory which is widely used in the industrial applications to enhance the system performance and reliability. This memory is based on advanced technology and has the ability to perform fast and reliable storage operations. It is designed to provide an optimal balance of speed, power and memory capacity.

N25Q064A13EF840E memory is often used in applications such as automotive, industrial process control, aerospace, defense, telecom and networking, medical and consumer electronics, networking, embedded and mobile applications and industrial data storage. The N25Q064A13EF840E can support high-speed data communications and is ideal for high-performance applications that require fast data transfer.

The N25Q064A13EF840E memory utilises high speed, low power, non-volatile and parallel programming and provides cost-effective storage capability for various applications. It deploys silicon-on-insulator (SOI) technology and is equipped with innovative architecture and features to help ensure maximum performance and reliability in harsh environments. The N25Q064A13EF840E memory provides a wide range of benefits for applications including enhanced system performance and reliability, faster operation speed, improved system design flexibility, and lower costs.

The N25Q064A13EF840E memory is a read/write memory device, utilising a conventional three-channel memory bus. It is designed to interface with microprocessors, FPGAs and ASICs with either a standard I/O interface or custom-made interface to handle data transfers between the memory and the memory controller. The device can store up to 8 Gigabytes (GB) of data and supports random page mode write access to make data storage efficient and fast.

The N25Q064A13EF840E memory features fast programming rates, high temperature ranges, write protect features and on-die error-correcting codes (ECC) to ensure accurate data transfer. The ECC protects against read and write errors. The write protect feature prevents accidental overwriting of memory blocks and can be set on each memory block to prevent data loss in the event of unexpected power failure.

The N25Q064A13EF840E memory delivers outstanding performance and efficiency, allowing customers to create more complex data storage solutions and applications. Its high-speed data communications and low power utilization makes it the ideal choice for high-performance applications requiring fast data transfer and reduced latency. In addition, the N25Q064A13EF840E memory offers a wide range of features and capabilities to meet the increasing demands of professional and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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