N25Q064A13ESEDFF TR Integrated Circuits (ICs)

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The type N25Q064A13ESEDFF TR is a type of semiconductor memory. It is commonly used as a type of flash memory, which is a special kind of memory that can be programmed and erased electronically. This makes it very useful for applications where information needs to be stored reliably in a very compact form. In this article, we will discuss the applications and the working principle of the N25Q064A13ESEDFF TR memory.

Applications

The N25Q064A13ESEDFF TR is an ideal choice for a variety of microcontroller-based applications. It is commonly used in industrial and consumer electronics as a memory that can store instructions and data very reliably in a very small form factor. It is also commonly used in embedded systems, where it is used to store the operating system and data associated with the system’s function. Additionally, it is commonly used in digital signal processors and microcontrollers, where it is used to store program and data information.

The N25Q064A13ESEDFF TR can also be used in mobile devices, such as smart phones and tablets. It is used to store the firmware, operating system, and user data. Additionally, it can be used in automotive applications, where it is often used to store system data and settings, as well as navigation or other onboard applications. The N25Q064A13ESEDFF TR is also used in SSDs (solid-state drives) as a way to store data without the need for moving parts.

The N25Q064A13ESEDFF TR is also useful in a variety of other applications, such as medical devices, test and measurement equipment, and more. It is very reliable, and its small form factor makes it very versatile.

Working Principle

The N25Q064A13ESEDFF TR is a type of non-volatile memory. This means that it retains its data even when power is removed. It is a type of flash memory, which is a special kind of memory that can be programmed and erased electronically. It operates on a principle known as ‘floating-gate’ technology, where a floating gate of electrons sits between two layers of insulation. When a voltage is applied to the gate, it allows electrons to pass from one layer of insulation to the other. By controlling the voltage applied to the gate, data can be programmed into, or erased from, the N25Q064A13ESEDFF TR memory.

As the name suggests, the N25Q064A13ESEDFF TR is a 64-megabit memory device. It is organized into 8 pages of 8-megabits each. Each page is further divided into 8 blocks of 1 megabit each. Each page and block can be individually programmed or erased. The N25Q064A13ESEDFF TR also features an on-die ECC (Error Correction Code) mechanism, which helps to detect and correct errors in the data.

The N25Q064A13ESEDFF TR features a top-notch performance. It has an access time of 75 ns, which is comparable to DRAM memory, and a write speed of up to 104 Mb/s. It also features a high temperature operating range of -40°C to +85°C. This makes it well-suited for a variety of applications that require reliable operation in extreme temperatures.

Conclusion

The N25Q064A13ESEDFF TR is an excellent choice for a variety of applications. It has a small form factor, high reliability, and excellent performance. It is commonly used in embedded products, digital signal processors, automotive, medical, and many other applications. The N25Q064A13ESEDFF TR operates on a floating-gate technology, which enables it to be programmed and erased electronically. For these reasons, the N25Q064A13ESEDFF TR is a popular choice for a variety of memory requirements.

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