N25Q128A11E1241F TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	128Mb (32M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	1.7 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)
Base Part Number:	N25Q128A11

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Introduction to N25Q128A11E1241F TR MemoryN25Q128A11E1241F is a type of non-volatile memory designed and manufactured by Micron Technology Inc. It is a quad-serial flash memory, which technology is based on the 3D vertical NAND (or V-NAND) architecture, and is commonly referred to as a 3D-NAND Flash Memory.Application Fields of N25Q128A11E1241F TR MemoryN25Q128A11E1241F has various application fields that include consumer applications, such as smartphones, tablets, digital cameras and camcorders, as well as data centers and enterprise storage applications. The memory also has a wide range of applications in automotive, medical, industrial, and consumer markets.In consumer applications, N25Q128A11E1241F memory is well-suited for a number of consumer applications. As it is particularly fast, N25Q128A11E1241F provides increased performance in consumer applications. In addition, it also has high density, low power consumption, and is highly reliable, making it an ideal choice for consumer applications.In data center and enterprise storage applications, N25Q128A11E1241F is used to store data such as application data and database files. The high storage capacity and excellent read and write performance allow for fast data transfer and manipulation. Furthermore, its high quality and robust design make it ideal for mission critical enterprise storage environments.Working Principle of N25Q128A11E1241F TR Memory N25Q128A11E1241F memory is based on the 3D Vertical NAND (V-NAND) technology architecture. The memory consists of a series of layers of floating-gate cells arranged in a three-dimensional structure. These layers are interconnected by vertical channels, with each layer having its own data transfer channel. This allows for high density and large capacity.When a cell of the memory needs to be read, a voltage is applied to the control gate, which causes electrons to flow from the source to the drain, forming an electric field. This electric field pushes the data stored in the cell to the sense amplifier, which reads the data and passes it to the data bus. The data is then stored in the memory.When a cell of the memory needs to be written, a voltage is applied to the word line, which also results in an electric field to be formed. However, this electric field is much stronger than the one created during read operations, resulting in the electrons being forced into the floating-gate, effectively trapping the data in the cell. ConclusionN25Q128A11E1241F TR Memory is a type of memory that is based on the 3D Vertical NAND (V-NAND) architecture and is well-suited for a range of consumer, data center, and enterprise storage applications. It has a high storage capacity, excellent read and write performance, and extremely low power consumption, making it ideal for a range of applications. It works by applying a voltage to the control gate to read data, and a stronger voltage to the word line to write data.

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