N25Q128A11EF840F TR Integrated Circuits (ICs)

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N25Q128A11EF840F is a serial NOR Flash memory from Micron Technology, Inc. It is widely used in various applications, including embedded systems, automotive, wireless communication, consumer electronics, etc. The memory can be used for both storage and execution.

The N25Q128A11EF840F uses a Quad-SPI (QSPI) interface, making it easy to interface with digital devices. It is based on the industry-leading 5V NAND Flash memory architecture, which provides fast access to data. It has a capacity of 128Mb and an 8-bit organization.

The N25Q128A11EF840F provides high performance with low power consumption. It has a split Word-Line architecture, which reduces standby current consumption, as well as an optimized program/erase algorithm. It has a fast random access read speed of 120MHz, a fast page program speed of up to 54MHz, and an erase speed of up to 25MHz in bursts.

The N25Q128A11EF840F has several features which make it well suited for embedded applications. The status register has an enhancement feature which allows the user to write and read the register in one cycle. There are also write protect and erase protection features which allow the user to protect against accidental code deletion or a power failure during a program or erase operation. It also has a secure erase feature which safeguards against tampering.

The N25Q128A11EF840F has several features which make it well suited for mass storage applications. It has a read operating temperature range of 0°C to +70°C and a write temperature range of -40°C to +85°C. It also has a write protection feature which allows the user to protect their data from accidental erasure. The N25Q128A11EF840F has a low board profile, making it ideal for mobile applications.

The N25Q128A11EF840F is a Non-Volatile memory device, which means that the data is stored even when the power is shut off. It works by using a technique called “floating gate logic”. In floating gate logic, the data is stored on an insulated gate, which is held in a non-conductive state. When the gate is switched on, the data is electrically selected and transferred to the output line. This allows the N25Q128A11EF840F to have fast access times and retain data even when power is shut off.

The N25Q128A11EF840F is a versatile memory device that is used in a variety of embedded and mass storage applications. It has low power consumption and optimized performance, making it ideal for a wide range of applications. It has advanced features such as write and erase protection, secure erase, and read temperature range. These features make it perfect for storing and transferring data in the embedded and mass storage applications.

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