Allicdata Part #: | N25Q128A13BF840E-ND |
Manufacturer Part#: |
N25Q128A13BF840E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M SPI 108MHZ 8VDFPN |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) SPI 108MHz ... |
DataSheet: | N25Q128A13BF840E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 8ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-VDFPN (MLP8) (8x6) |
Base Part Number: | N25Q128A13 |
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N25Q128A13BF840E is a state-of-the-art memory device from Micron Technology, Inc. It is a multi-layer memory device, which makes use of NAND Flash and NOR Flash technologies for its operation. The device has an operating voltage of between 1.8V to 3.6V, and offers a working temperature range of between -40°C to +105°C.
N25Q128A13BF840E is used in a broad range of applications and can be used as a storage device, memory controller, or as a programmable logic element. It is also useful in automotive, aerospace, and medical applications due to its wide temperature range and reliability.
The basic working principle of N25Q128A13BF840E is often referred to as “multi-layer memory technology”. It works through the combining of NAND Flash and NOR Flash technologies. NAND Flash is used for storing data as flash cells, while NOR Flash acts as a controller for transferring data between the NAND Flash and the memory device. The memory device can also use its” Advanced Multi-Layer” technology, which helps it to store more data on the same amount of space.
This technology works by compressing the data into many layers, which makes the data more compact, and thus allows it to occupy less space. This makes the device more energy efficient and reliable, as it can access data faster, and store more data on the same amount of space. This makes it ideal for use in a variety of applications.
N25Q128A13BF840E is also capable of supporting broad range of data types and formats, such as SLC and MLC. It also offers faster random read speed and greater endurance compared to other memory devices, making it the ideal choice for a variety of applications. Furthermore, it is able to support power fail, error correction, and data security features, which make it more reliable and secure.
N25Q128A13BF840E also offers several features such as programmable temperature sensor and watchdog timer for improved temperature control, as well as burn-in capabilities for faster production testing. It also offers several security features, such as denial-of-service protection, write-protect, and secure boot options.
Overall, N25Q128A13BF840E is a great choice for a variety of applications that require reliable and energy-efficient memory devices. It offers the most advanced technology available and can help reduce the total cost of ownership by offering greater endurance and faster random read speeds, as well as enhanced security features.
The specific data is subject to PDF, and the above content is for reference
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N25Q064A11ESECFE | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M SPI 108MHZ 8... |
N25Q064A13ESED0E | Micron Techn... | -- | 1000 | IC FLASH 64M SPI 108MHZ 8... |
N25Q064A13ESED0G | Micron Techn... | -- | 1000 | IC FLASH 64M SPI 108MHZ 8... |
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N25Q128A11ESECFE | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 108MHZ ... |
N25Q128A13ESEDFG | Micron Techn... | -- | 1000 | IC FLASH 128M SPI 108MHZ ... |
N25Q128A13ESEH0E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M SPI 108MHZ ... |
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