N25Q128A13BF840F TR

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The N25Q128A13BF840F is a device designated by Micron and is classified as Memory. The unique commercial name is N25Q, and the product size is 8mm x 8mm. It is a high-performance serial NOR Flash memory, which provides a storage density of 16M bits. Operating voltage ranging from 1.65V to 3.6V.

The N25Q128A13BF840F is applicable to a wide range of applications. This chip can be used in embedded systems, cellular phones, and industrial control systems, especially for applications require high-speed data access and large capacity memories. It is easy for users to access the stored data through a basic bus. The small package of this chip is also advantageous in many applications since it reduces the circuit board area.

The working principles of N25Q128A13BF840F is based on a standard serial peripheral interface (SPI). The chip contains a memory array, control logic and SPI timing, making it easier to store and access user data. Users can select between single, dual, or quad command to access the data stored in this memory. In addition, this memory can support higher clock frequency and faster data transfers, allowing customers to develop highperformance systems.

The N25Q128A13BF840F has a 2K and 4K sector erase capability. Multiple erase algorithms are provided for multiple protection, including write protection and block locking function. All data can be randomly programmed using page programming. Write protect pins provide safety when a write protect signal is input, which should be designed in accordance with the requirements of user\'s application.

The N25Q128A13BF840F also supports the deep power down and standby modes, which can reduce the power consumption. This feature is important for battery operated systems. In addition, this memory also features a 4-4-4 addressing scheme, which enables the memory to access 16 MB address space across a single bus. The device also includes hardware-assisted data programming algorithms to ensure reliable operation.

The N25Q128A13BF840F has excellent operational characteristics, which extended temperature ranging from -40℃ to 85℃, and can withstand 2000V HBM ESD protection. It is characterized by high speed and low power consumption, and is compliant to the RoHS directive v6. The chip is verified during commercial, industrial, and military applications, and is quality assured.

In summary, the N25Q128A13BF840F is an ideal solution for storage applications, especially those which require high speed and large capacity memories. With its dramatic improvements in access speed and low power consumption, as well as its ability to withstand harsh conditions, this memory is capable of supporting a wide range of applications which enable better performance and reliability.

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