N25Q128A13BSF40F TR Allicdata Electronics

N25Q128A13BSF40F TR Integrated Circuits (ICs)

Allicdata Part #:

557-1612-2-ND

Manufacturer Part#:

N25Q128A13BSF40F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ 16SO
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 108MHz ...
DataSheet: N25Q128A13BSF40F TR datasheetN25Q128A13BSF40F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO
Base Part Number: N25Q128
Description

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The N25Q128A13BSF40F TR (N25Q128) is a non-volatile memory that makes use of 3D vertically stacked arrays. It is a Flash serial-interface memory (SPI Flash). This device is capable of very fast read, erase and write operations, making it perfect for data storage, communication and communication protection applications. The device has a 64-bit addressing capability and a maximum write rate of up to 4MB/s. It also comes with an integrated, high-speed controller for data manipulation and manipulation security.

N25Q128 is a monolithic non-volatile memory that is ideal for applications requiring high speed and low power. Its unique architecture integrates the double-transistor logic (DTL) gate array, dual-clocking, timer/counter, and register memory all in one package. The DTL gate array allows for fast cycling of logic states from one data point to the next, resulting in quicker access times. The dual-clocking feature provides a more stable frequency for more reliable data operations, while the timer/counter and register memory provide additional device control.

As a memory device, N25Q128 combines the features of Flash memory with the features of static RAM (SRAM). It has the same cell size and its core structure as a Flash memory, with the additional features of SRAM cell size, allowing for fast read and write operations. The random access write operation of N25Q128 is much faster than that of Flash memory, and can be used for efficient data transfers. It is also equipped with hardware error correction, making it very reliable.

In terms of application fields, N25Q128 is most commonly used in data storage, communication, and communication protection applications. It is used for storing information in communications networks, such as for storing voicemail messages. It can also be used for storing digital photos, music, and other types of digital media. It is also used for storing important documents and data, as well as for data encryption.

In terms of working principle, the N25Q128 memory device is based on a serial interface architecture. Basically, this device is capable of performing read, write and erase operations through serial communication. The data is transferred between the N25Q128 and the host device in the form of packets of data. Each packet contains information which should be stored in the memory device. The packets also include the read or write instruction, or erase instruction, as well as the address of the target address. The data is then programmed or erased at the target address location.

The N25Q128A13BSF40F TR is a versatile, low-power, highly reliable memory device that offers fast and reliable performance in data storage, communication, and communication security applications. Its numerous features and its form factor make it suitable for a variety of applications. Its ease of use and excellent performance make it an ideal solution for numerous data storage and communication solutions.

The specific data is subject to PDF, and the above content is for reference

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