Allicdata Part #: | N25Q128A13E1441FTR-ND |
Manufacturer Part#: |
N25Q128A13E1441F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M SPI 108MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz ... |
DataSheet: | N25Q128A13E1441F TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (32M x 4) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 8ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (6x8) |
Base Part Number: | N25Q128A13 |
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As the world becomes more and more digitally based, the complexity of its memory chips continues to rise. One of the latest additions to the memory landscape is the N25Q128A13E1441F TR, a 128 Mbit (16 MB) Multi I/O Serial Flash memory with enhanced write protection features. This flash memory device boasts a range of features, including fast read and write speeds, high quality data retention, and robust security features.
The N25Q128A13E1441F TR is used in a variety of applications. Most notably, it is designed for use in embedded systems such as automotive, industrial, and medical. It can be used to store and execute programs in these applications, provide a fast boot-up time and storage for critical data, and provide advanced protection against data loss due to power outages. With its enhanced write protection features, it is even more reliable and secure than traditional Flash memory technologies.
The N25Q128A13E1441F TR is based on a split-gate transistor device which is integrated into the non-volatile memory array. This design feature facilitates multiple programming options, including simultaneous read and write operations, byte and word mode signals, fast random read instructions, and other advanced features. It is powered by the asymmetric write protect feature, which helps protect the memory against accidental or purposeful erasure of data.
The N25Q128A13E1441F TR also has an optimized architecture, allowing it to achieve fast read and write speeds while simultaneously providing improved power saving features. This helps reduce the power consumption of the system, resulting in increased battery life and reduced long-term costs. It also has a true erase feature which completely erases the memory cell before writing new data, making it more reliable. Additionally, it has anti-corruption protection, which verifies and corrects the data to ensure data integrity and reliability.
The N25Q128A13E1441F TR also provides a secure erase feature, which is designed to reduce the susceptibility of unauthorized data access or data manipulation due to physical device removal or tampering. It also has a secure boot and secure debug feature, as well as advanced security features including encryption/decryption, secure key storage/authentication, and other advanced security techniques.
Overall, the N25Q128A13E1441F TR is a powerful and reliable Flash memory device. Its fast read and write speeds, enhanced write protection features and optimized architecture make it an ideal solution for embedded systems. Its advanced security and protection features provide superior data reliability and integrity, making it the perfect choice for those applications that require optimal security and reliability.
The specific data is subject to PDF, and the above content is for reference
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