N25Q128A13EF840E Allicdata Electronics
Allicdata Part #:

557-1561-ND

Manufacturer Part#:

N25Q128A13EF840E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ 8VDFPN
More Detail: FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz ...
DataSheet: N25Q128A13EF840E datasheetN25Q128A13EF840E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (MLP8) (8x6)
Base Part Number: N25Q128
Description

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N25Q128A13EF840E is a Multi-I/O NOR Flash memory with a capacity of 128Mbit. It is an embossed leadless package, featuring a small form factor and low power consumption, making it suitable for a wide range of applications. N25Q128A13EF840E, with a Serial Peripheral Interface (SPI-compatible), is used for mass storage applications such as system code storage, data storage, and code storage for mobile and consumer applications.

As memory becomes more important in many applications, the need for NOR Flash memory solutions increases as well. The N25Q128A13EF840E provides a reliable and secure solution with high performance and low electrical current draw. It is ideal for applications that require fast read and write cycles, such as automated test equipment, secure code storage, data logging, and gaming.

N25Q128A13EF840E memory consists of 8,192 sectors of 16Kbyte each. It is organized as 8,192 pages of 256 bytes each. Its top-speed performance can be achieved at 125MHz in Quad/Dual/Single I/O mode, or 75MHz in Quad/Dual mode. Its current draw is minimized to 6.5mA (max), and its temperature range is from 0°C to +85°C.

The N25Q128A13EF840E utilizes the Flash architecture, which comprises of the primary memory cells and the controller. The primary memory cells drive the functionalitiy of the device and perform the read/write operations. The controller is responsible for the overall operation, including error checking and interference with the primary memory cells.

The N25Q128A13EF840E utilizes a host-independent architecture in which the controller sends commands to the memory cells through serial bus commands and receives status information in response to the command. In addition the N25Q128A13EF840E also incorporates a sophisticated and robust host-independent interface to provide reliable status updates, device information and data transmission.

The N25Q128A13EF840E provides fast read and write throughput due to its synchronous architecture. This allows data to be transferred in bursts of up to a total of four cycles with a clock frequency up to 75MHz. The N25Q128A13EF840E also supports multiple read and write protocols. These include Single Shot, Burst, Read/Modify/Write, Double Word Read/Write, Quad Word Read, Quad Word Write, Block Erase, Fast Erase and Consecutive Word Mode.

The N25Q128A13EF840E memory is an Embossed Package, making it suitable for both mobile and embedded applications. It offers high-reliability and low-power consumption, making it ideal for use in a variety of applications, such as system code storage, data storage, and code storage for mobile and consumer applications.

In summary, the N25Q128A13EF840E is an ideal NOR Flash memory solution for a wide range of applications, due to its high speed performance, low power draw, and secure architecture. It offers a reliable and secure solution, making it the perfect choice for data logging, gaming, automotive and embedded applications. With its small form factor and high-reliability, the N25Q128A13EF840E is ideal for mobile and embedded applications.

The specific data is subject to PDF, and the above content is for reference

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