N25Q128A13EF8C0F TR

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N25Q128A13EF8C0F, classified as memory, is a Non-Volatile Memory (NVM) device. It is a 3V, 128-Mbit, 70-nm CMOS NAND Flash Memory with advanced features. N25Q128A13EF8C0F can be used in applications such as secure storage, reliable data storage, and code execution. It also offers high endurance, high performance, and high speed.

The N25Q128A13EF8C0F contains 13 bits for the core ID and 8 bits for the flash expansion code (FEC). Its 8-bit FEC allows the device to have up to 2^8 or 256 higher densities than its core density. This enables customers to customize their solutions to fit their needs. The device uses Multi-I/O technology, which allows it to operate up to 133MHz.

In terms of its application field, N25Q128A13EF8C0F can be used in a variety of different systems. It can be used in automotive, industrial, and medical systems, as well as in hand-held electronic devices and embedded systems. It can also be used in PC memory, wireless communication, secure storage, and secure data storage. The device is particularly popular in the field of wireless communication and provides advanced features, such as ECC. Its high speed make it suitable for applications that require fast data transfers, such as video cameras.

N25Q128A13EF8C0F also offers a wide range of features, such as redundant row and block erase, up to 16 global Blocks and 256 user Blocks, up to 32 Data Bytes provisioning, 16-Mbits per second data transfer speed, and ECC implementation.

The working principle of N25Q128A13EF8C0F is based on Write Protect/Read Protection, Error Correction Code (ECC) and Error Detection Code (EDC) schemes. The device\'s ECC circuit protects data from corruption, while its EDC circuit makes sure that data is read correctly. The device uses a protection mechanism to ensure that errors are corrected before they become permanent. The protection mechanism also prevents data from being written to a location that is already occupied by another piece of data. This ensures that data is not corrupted or corrupted when being written.

In summary, N25Q128A13EF8C0F is a high endurance, high performance, and high speed Non-Volatile Memory (NVM) device. Its 8-bit FEC allows the device to have up to 2^8 or 256 higher densities than its core density, allowing customers to customize their solutions to fit their needs. N25Q128A13EF8C0F also offers Multi-I/O technology, ECC, and EDC protection schemes, and can be used in multiple applications, making it a versatile memory device.

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