N25Q128A13TSF40F TR

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N25Q128A13TSF40F is a 126M-bit serial NOR flash memory, which belongs to the Memory family.

N25Q128A13TSF40F(hereinafter referred to as N25Q128A13TSF40F) is a three-level cell(TLC) Non-Volatile Memory(NVM) designed for enterprise storage applications. It integrates two banks of 64M-bit memories with a single 2.7V power supply and can provide up to 126M bits of total storage capacity. In addition, N25Q128A13TSF40F has an embedded 8-bit scrambled Cyclic Redundancy Check(CRC)for error detection, and supports various I/O bus configurations such as x1, x2, x4, x8 and x16.

N25Q128A13TSF40F is suitable for enterprise server, boot code storage, disk array and commercial application systems that require high performance and high capacity memory solutions. The salient features of N25Q128A13TSF40F are 75% lower power consumption, 40% faster program, erase and read speed, 16K data and program sectors, 30-byte write cache support, 1K-byte sector erase support and uniform 4K-byte sector architecture.

The working principle of N25Q128A13TSF40F is based on Non-Volatile Memory, which stores data in Flash memory and does not require an external power supply to retain data.N25Q128A13TSF40F is connected to an external controller or host system through an 8-bit or 16-bit serial peripheral interface(SPI).The external controller uses SPI commands to control N25Q128A13TSF40F, which includes the initialization of N25Q128A13TSF40F, reading, writing, updating and erasing data in the memory.

N25Q128A13TSF40F supports Quad Page Program mode, allowing the user to program four different pages at the same time. The Quad Page Program mode can increase the program speed of N25Q128A13TSF40F by a factor of four. N25Q128A13TSF40F also supports Streaming mode. In this mode, the data transfers occur with a greatly increased transfer rate that far exceeds the generic bus transfer frequency.

N25Q128A13TSF40F supports high security features, including quad I/O and full-duplex operations, embedded 8-bit scrambled CRC to monitor data integrity, hardware locked-bit and program status registers to prevent accidental data overwrites and write-protection operations, hardware write-protection bits to protect data across power cycle, erase error counter and data-retention timer to maximize data integrity, and built-in low voltage detection.

N25Q128A13TSF40F supports 10-cycles minimum number of random read cycles, unlimited number of erase/write/program cycles, up to 25 years minimum data retention, and up to 300°C maximum junction temperature.

N25Q128A13TSF40F provides advantages over other memory solutions, such as 8-bit and 16-bit spi masks, low power, high performance and high capacity memory solutions for enterprise storage systems. It can be applied in enterprise server, boot code storage, disk array and commercial application systems.

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