N25Q128A23B1241E

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	128Mb (32M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)
Base Part Number:	N25Q128A23

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N25Q128A23B1241E is a non-volatile inline memory module for integrated circuits. It is manufactured by Macronix, a leader in the memory industry. The N25Q128A23B1241E is a 64 Megabits (Mbit) serial flash memory, ideal for low-power, extended temperature range, and high-endurance applications. This memory is capable of programming and erasing 32 MB of data and is ideal for applications that require high capacity memory storage.
The N25Q128A23B1241E is based on the well-known NOR architecture and features as many as 8 bit cells in a single memory device. This device can replace multiple EPROM, EEPROM, and even high-density dynamic RAM (DRAM). It can be used in a variety of electronics such as embedded systems, automotive electronics, GPS navigation systems, cameras, gaming consoles, home electronics, and medical devices. It is also perfect for low-power applications that require larger storage capacities and where power dissipation is an issue.
The N25Q128A23B1241E has an industry-leading 32 megabit (Mbit) capacity and its built-in memory performance is on par with that of other industry-standard flash products. It also utilizes Macronix’s patented technology to create an integrated memory device that provides great performance and reliability. Its architecture also increases its endurance and data retention spaces up to 100,000 cycle endurance and up to 20-year data retention.
The N25Q128A23B1241E utilizes a Serial Peripheral Interface (SPI) that enables the device to be connected to external systems with minimal complexity. The device can be programmed, erases, and read repetitively in pages as small as 4 KB. The N25Q128A23B1241E also enables ultra-fast message transfer rate of up to 100 Mb/s.
In terms of application field, the N25Q128A23B1241E is a great choice for any system that needs to store substantially large amounts of data with minimum power consumption. The device is very well suited for applications such as wireless networks, embedded systems, automotive electronics, and medical devices. The device has also found its way into gaming consoles, where it is widely used for game logic programming and data storage.
In terms of working principle, the N25Q128A23B1241E utilizes a number of techniques such as floating-gate MOSFETs, non-volatile memory elements, floating-gate memory cells, and special memory configurations. It also uses a special floating-gate transistor technology to reduce programming noise. The N25Q128A23B1241E has a single chip architecture which makes it ideal for applications that require low power consumption and fast programming speeds. It also features an extensive array of operating parameters, including near-zero write latency, self-timed write cycles, multiple access modes, page divisions, and write protection.
The N25Q128A23B1241E is one of the most popular non-volatile memories in the market today. It offers high capacity memory storage, low power consumption, and fast programming and erasing speeds. The device is ideal for a wide range of applications that require large memory capacities and fast access times. The device also utilizes a special floating-gate transistor technology to reduce programming noise and ensure reliable operation.

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