N25Q256A11ESF40G Allicdata Electronics
Allicdata Part #:

N25Q256A11ESF40G-ND

Manufacturer Part#:

N25Q256A11ESF40G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M SPI 108MHZ 16SOP2
More Detail: FLASH - NOR Memory IC 256Mb (64M x 4) SPI 108MHz ...
DataSheet: N25Q256A11ESF40G datasheetN25Q256A11ESF40G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (64M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2
Base Part Number: N25Q256A11
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important element in the functioning of computers and is a necessity for everyday applications. N25Q256A11ESF40G is a type of non-volatile serial NOR Flash Memory which was developed for use in multiple applications. Since its initial introduction in 2004, N25Q256A11ESF40G has gained great popularity and is becoming increasingly popular in the market.

N25Q256A11ESF40G is a type of non-volatile memory that stores data even when the power is off. It’s able to store up to 256 megabytes of data and has the capability of reading and writing to the memory with a single instruction. This type of memory is commonly referred to as “serial NOR” due to its being addressed in a serial fashion, which allows for faster access times compared to other types of non-volatile memory. N25Q256A11ESF40G also has an enhanced erase/write cycling and a write protection scheme. This makes it ideal for applications in which the data must be retained for long periods of time.

The operation of N25Q256A11ESF40G is accomplished through electron tunneling, which is the process by which electrons traverse the interface between two materials, such as silicon and glass. During this process, electrically charged particles transfer energy to an acceptor, causing it to become charged and form an energy gap. This energy gap then allows electrons to move freely between the two materials, and the operation is referred to as “electron tunneling.”

N25Q256A11ESF40G is ideal for applications that require high reliability and fast data transfers, such as in many of today’s high-speed mobile devices and embedded systems. This type of memory is also used in automotive and industrial applications, due to its durability and reliability. In addition, it is also employed in medical instruments, such as MRIs. It is also used for high-reliability applications in military systems.

N25Q256A11ESF40G is a highly reliable type of memory, with its ability to retain data even when power is removed. It is often used for its robustness in these applications, as well as for its reliability and quick data transfer capability. N25Q256A11ESF40G is also very affordable and is capable of storing up to 256 megabytes of data.

In conclusion, N25Q256A11ESF40G is a reliable and efficient type of serial NOR Flash Memory which is suited for multiple applications. Its robustness and durability make it one of the most popular types of memory on the market. Additionally, its quick data transfer capabilities are important in modern applications, such as in medical instruments and mobile computing devices. Moreover, it offers affordability and is able to store up to 256 megabytes of data, making it one of the most widely used types of memory today.

The specific data is subject to PDF, and the above content is for reference

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