N25Q256A13ESF40G

Memory

The N25Q256A13ESF40G is a non-volatile serial multi-I/O Flash memory device for use in a wide variety of applications. This device is a small package, 8-pin Wide-body Lead (WBL) device that offers a total of 256-Mbit of data storage. It is suitable for industrial, consumer, automotive and medical applications.

The N25Q256A13ESF40G can be used in either a single-die, or paired with a second die to double the storage space and provide a higher density of data. In addition, the device is ideally suited for high-volume production environments because it uses low cost lead-frame technology to reduce manufacturing cost and improve reliability.

In terms of its application fields, the N25Q256A13ESF40G is ideal for use in systems such as industrial automation, medical devices, programmable logic controllers (PLCs), test & measurement equipment and telecommunication applications. It is also used in a wide range of consumer products, including personal digital assistants (PDAs), smart watches, gaming machines and audio systems.

In terms of its working principle, the N25Q256A13ESF40G is based on non-volatile memory technology, also known as Flash Memory. This type of memory is used to store data even after the power is removed, making it a reliable and durable solution. The device uses a single 10X10mm package to provide up to 256-Mbit of memory space, with the ability to store up to 8GB of data. The device is also built with an integrated low-power consumption architecture, making it suitable for use in low-power applications. The device also provides high-speed read/write access times of up to 133MHz.

The N25Q256A13ESF40Gis designed with a high-speed serial peripheral interface that is backwards compatible with the standard SPI and Dual SPI protocol. It also supports DTR mode and quad-SPI, allowing for fast data read and programming. The device also offers high reliability and longevity, as it has a total byte-writable endurance up to 4K cycles and a backup erase cycle of up to 1K cycles. In terms of its ECC performance, the N25Q256A13ESF40G provides a bit error rate (BER) of less than 30ppm.

Overall, the N25Q256A13ESF40G is a non-volatile, high-performance and reliable Flash memory device. It offers a total of 256-Mbit of data storage space and has an integrated low-power consumption architecture, making it suitable for use in a wide variety of applications. The device also provides high-speed read/write access times of up to 133MHz and supports DTR mode and quad-SPI for fast data read and programming. The device is also designed with a high-speed serial peripheral interface that is backwards compatible with the standard SPI and Dual SPI protocol and provides a BER of less than 30ppm.