N25Q256A13ESFA0F TR

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The N25Q256A13ESFA0F TR is a 256Mbit (32MByte) NAND Flash Memory device from Micron operating on 3.3V Supply Voltage. It’s one of the most advanced NAND Flash components available on the market today. This device is specifically designed for high reliability, endurance and performance applications.

The N25Q256A13ESFA0F TR is a 25nm MLC NAND Flash memory device with a uniform 32 MB current slice size and a write size of 4KB. Its NAND Flash-based architecture provides a low cost and a fast read/write access time. It has a clock speed of 107MHz, a deep power down mode of 1µA and a 256 MB ferroelectric random access memory (FRAM) buffer. The device is provided with a four-plane-read architecture, an embedded error correction code (ECC) and an array of scan chains for programming, option BCH ECC, and device erase support.

The N25Q256A13ESFA0F TR Memory is ideally suited for automotive, consumer, storage and industrial applications. This device is able to meet all the requirements of the challenge applications due to its outstanding performance characteristics and its robust reliability. It offers advanced features like high-density capacity, fast random access, wide temperature range, superior retention and low active current.

The N25Q256A13ESFA0F TR Memory’s work principle is based on a multi-bit, multiple-level cell (MLC) NAND Flash array. This array consists of several rows, each holding multiple cells, and each cell is further partitioned into sectors. The sectors are further classified into memory blocks, wherein data is stored. The MLC Flash array is equipped with a buffer, controller and ECC logic, to ensure smooth operations and maximum data integrity.

The N25Q256A13ESFA0F TR Memory has a page erase feature, where the entire page can be simultaneously erased, without affecting any other page. This can be an advantage for low-level erase operations. The N25Q256A13ESFA0F TR also has a block erase feature, where one or more blocks can be erased at once. This option is suitable for higher endurance writing operations.

As for reading, the N25Q256A13ESFA0F TR offers a 4-plane read feature, where 4 planes can be simultaneously read, resulting in a faster access time. The N25Q256A13ESFA0F TR also contains an embedded error correction code (ECC) logic, to provide extra protection against data errors. It supports wear leveling, where wear is distributed across multiple pages in order to prolong memory longevity.

The N25Q256A13ESFA0F TR Memory is a highly reliable, performance-optimized device, suitable for various applications such as automotive, consumer, storage and industrial. Its advanced features include high-density capacity, fast random access, wide temperature range, superior retention and low active current. It also provides a 4-plane read feature, embedded ECC logic, wear leveling, page and block erase features, thus making it an ideal choice for a variety of challenging applications.

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