N25Q256A73ESF40F TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (64M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:	16-SOP2
Base Part Number:	N25Q256A73

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Introduction

N25Q256A73ESF40F TR is a non-volatile memory developed by NAND flash memory manufacturer Infiniti, integrated with their proprietary Charge Trap Flash Technology (CTFE™) for high reliability and low power operation. This memory device is especially suitable for applications such as embedded systems, medical/Industrial imaging, educational, automotive and consumer electronics where a high speed and low power device is required.

Application Field

N25Q256A73ESF40F TR is designed for high-bandwidth low-power systems and is especially suitable for applications that require serial I/O. It is often used in applications such as industrial imaging, medical imaging, automotive applications, medical devices, educational and embedded systems. The device is intended for applications such as serial boot/programming, data storage and operating system management. It also helps in optimizing design strategies and reduces design complexity as it supports up to 8 Banks and can be used to provide up to 32KB of addressable space.The device also supports a wide range of operating voltages (2.7V up to 3.6V) with fast read access times (50MHz). This makes the device suitable for power-constrained systems, as well as for providing superior performance.

Working Principle

The N25Q256A73ESF40F TR memory device is based on Infiniti\'s proprietary Charge Trap Flash Technology (CTFE™). This technology stores the electrons on an insulating dielectric rather than on a floating gate as most traditional Flash technologies do. This has several advantages over the traditional floating gate memory technologies:1. Higher write and erase endurance, allowing for more writes and erase cycles. 2. Faster write and erase operations. 3. Faster programming and read back times.4. Lower power consumption, compared to that of traditional floating gate Flash technologies.In addition to these features, the N25Q256A73ESF40F TR supports up to 8 banks, which can provide up to 32KB of addressable space. The device also supports fast read access times of up to 50MHz, making it suitable for applications with tight power budgets.

Conclusion

N25Q256A73ESF40F TR is a non-volatile memory device developed by Infiniti, integrated with their proprietary Charge Trap Flash Technology (CTFE™) for high reliability and low power operation. It is perfect for high-bandwidth low-power systems and is especially suitable for applications that require serial I/O such as industrial imaging, medical imaging, automotive applications, medical devices, educational and embedded systems. The device supports a wide range of operating voltages (2.7V up to 3.6V) with fast read access times (50MHz), making it suitable for power-constrained systems. It also supports up to 8 Banks and can provide up to 32KB of addressable space. With its features, the N25Q256A73ESF40F TR is perfect for applications such as serial boot/programming, data storage and operating system management.

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