N25Q512A13G1241E

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (128M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)
Base Part Number:	N25Q512

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Introduction to N25Q512A13G1241E
The N25Q512A13G1241E is a memory device manufactured by Micron Technology Inc. It is a 512Mb, serial NOR flash memory device. The device features an asynchronous interface for efficient communication with microcontrollers and other embedded systems. The N25Q512A13G1241E is designed for enhanced durability and optimized for performance and reliability in a variety of applications.Applications of N25Q512A13G1241E
The N25Q512A13G1241E is suitable for a wide range of applications, including embedded systems, consumer electronics, storage applications and more. It is suitable for use in automotive applications, wearables and other consumer electronics applications. It is compatible with many microcontroller platforms and interfaces with other memory devices as well. Some common applications that require the N25Q512A13G1241E include:

• Automotive system ECUs
• Retail consumer products
• Cellular phones
• Digital cameras
• Set-Top Boxes
• Portable media players
• PDAs and wearable electronics
• RFID readers

Working Principle of N25Q512A13G1241E
The N25Q512A13G1241E memory device works in an asynchronous mode with a simple three-line interface. It contains an internal 8-bit buffered input/output latch and an SPI-compatible multiplexed address/data bus interface. It provides a 32-byte write-buffer for programming efficiency during data transfers. The device provides fast read and write accesses and is designed for easy and flexible access to stored data.The N25Q512A13G1241E is designed for high endurance and reliable performance. It is based on Micron’s 20nm process technology and utilizes enhanced data protection features which ensure reliable data transfer and storage. It also features advanced error correction and a programmable read latency period. It supports chip select notification and power down/power up to reduce system power consumption. The N25Q512A13G1241E supports on-the-fly and in-system reprogramming which offers increased system flexibility and design advantage.Conclusion
The N25Q512A13G1241E is an efficient and reliable memory device from Micron Technology Inc. It is suitable for a wide range of applications in automotive and consumer electronics, as well as storage and other embedded systems. It uses an asynchronous mode and a three-line interface for efficient communication and contains an 8-bit buffered input/output and a SPI-compatible multiplexed address/data bus interface. It provides fast read and write accesses and is designed for high endurance and reliable performance.

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