N25Q512A83G1241F TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (128M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)
Base Part Number:	N25Q512

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Introduction

The N25Q512A83G1241F TR is a Non-Volatile Memory integrated circuit used for various applications. It combines non-volatile memory, such as electrically erasable PROGRAMMABLE READ ONLY MEMORY (EEPROM) and FLASH MEMORY, with SRAM built-in volatile memories. N25Q512A83G1241F TR can also be programmed, that is, program code can be rewritten, updated or erased in the memory. In this article, we will discuss the application fields and working principles of N25Q512A83G1241F TR.

Application Field

The N25Q512A83G1241F TR is ideal for use in applications requiring data storage, wireless remote and point-of-sale-terminals, medical devices, digital TV, automotive, memory cards. and industrial systems. It has an exceptionally wide temperature range that allows it to be operated between -40℃ and +105℃.The N25Q512A83G1241F TR\'s versatile architecture also extends its use in embedded applications. It features an I2C interface, allowing it to be easily connected to other peripheral devices in industrial systems and communication systems. The N25Q512A83G1241F TR also has a serial peripheral interface and is compatible with SPI and dual-SPI protocols.Moreover, the N25Q512A83G1241F TR offers a high endurance rated for up to 1.5 million program/erase cycles and 4 million write endurance and an extended retention time of 10 years. It can also be programmed and erased quickly, with a data rate up to 85 Mbits/s at 2.7-3.6V, making it an ideal choice for speed-sensitive applications.

Working Principle

The N25Q512A83G1241F TR consists of a combination of non-volatile memory (NV memory) and SRAM (Static Random Access Memory). The combination provides high-speed access to data stored both in the NV memory and in the SRAM.The N25Q512A83G1241F TR is organized much like any other type of non-volatile memory. It has a number of memory cells arranged in a matrix, with row lines connected to the column lines by conductive areas called gates. The selection of the memory cells is carried out through the row and column lines.The N25Q512A83G1241F TR also implements an additional layer of redundancy to prevent the loss of data due to cell failures or damaging insulation of cells. The redundant elements are called redundant bits, and are grouped up with the memory cells.The N25Q512A83G1241F TR also utilizes a two-phase write operation which helps to reduce power consumption. When a row is selected, the gate is turned ON and the charge stored in the source and drain junction of the selected row is stored in the non-volatile memory cells. When the gate is turned off, the charge is stored in the non-volatile memory cells and the data can be written to both the selected row and the redundant bits.Finally, the N25Q512A83G1241F TR features an ultra-low power mode, allowing the device to operate at reduced power consumption while preserving the contents within the non-volatile memory. This is a useful feature that allows the device to be used in applications where power consumption must be minimized.

Conclusion

The N25Q512A83G1241F TR is a versatile integrated circuit used for a variety of applications. Its combination of non-volatile memory and SRAM provides high-speed access to data stored both in the NV memory and in the SRAM. It is ideal for use in embedded applications and can be programmed quickly and with a power consumption of up to 85 Mbits/s at 2.7-3.6V. The flexible architecture and features of the N25Q512A83G1241F TR make it an ideal choice for data storage, wireless remote and point-of-sale-terminals, medical devices, digital TV, automotive, memory cards, and industrial systems.

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