NDS9933 Discrete Semiconductor Products |
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Allicdata Part #: | NDS9933TR-ND |
Manufacturer Part#: |
NDS9933 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 3.2A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.2A 900mW Sur... |
DataSheet: | NDS9933 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 3.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 10V |
Power - Max: | 900mW |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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NDS9933 is an array of four N-channel enhancement-mode silicon junction field-effect transistors (MOSFET) designed for use in switching, low level amplifier and output stages. It is commonly used in audio amplifiers and D/A converters.
NDS9933 offers a minimum of eight packages, such as 5-pin SOT-223, 8-pin SOIC, 8-lead MSOP, 8-lead MFP, 8-lead KE-8, 10-lead TO-251, and 10-lead TO-252. Each package has soldered directly onto a PCB, making it easy to install and requiring minimal board space.
This device uses high-voltage and high-current N-channel MOSFETs, resulting in lower inrush current, improved EMI performance, and higher power efficiency. The NDS9933 also comes with a high breakdown voltage capability and low gate-to-source capacitance, allowing for faster switching. It also has low gate charge, low typical Ron, and low drain-to-source on-resistance (RDSon).
The main advantages of the NDS9933 are its low power drain, low noise level, and enhanced power performance over other types of MOSFETs. It allows for the reduction of operating temperature and higher efficiency, resulting in longer operating life and higher productivity.
The working principle of the NDS9933 is based on the capacitive coupling of the gate and drain terminal. When an appropriate gate voltage is applied, electrons within the channel region acquire the extra energy and form an inversion layer. The MOSFET conducts when the gate voltage is above its threshold voltage, forming an inversion layer, and hence allowing current to flow between the source and drain terminals.
The NDS9933 is mainly used in audio amplifiers, microphone preamplifiers, auxiliary, audio signal switching, and power switching applications. It is also used in DC-DC converters, computer monitors, security systems, and consumer electronic devices. Furthermore, this MOSFET array is used in power management and devices involving load switching.
The NDS9933 has become a popular choice for many applications, due to its versatile design and superior performance. It is an ideal solution for applications that require high efficiency, low noise, and enhanced power performance.
The specific data is subject to PDF, and the above content is for reference
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