NDS9400A Allicdata Electronics

NDS9400A Discrete Semiconductor Products

Allicdata Part #:

NDS9400ATR-ND

Manufacturer Part#:

NDS9400A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 3.4A 8-SOIC
More Detail: P-Channel 30V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: NDS9400A datasheetNDS9400A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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Transistors are one of the most important types of electronic components which appear in various applications. The NDS9400A, also known as the Power MOSFET, is a single field-effect transistor (FET) manufactured by NDS Technologies and used in a variety of power and radio frequency (RF) applications. This article provides a brief overview of the NDS9400A and the fields in which it can be used and describes its working principle.

The NDS9400A is a single-gated MOSFET with a drain-source breakdown voltage of up to 100V. It is made from gallium nitride (GaN) and is available in two different packages for surface mounting or through-hole mounting. It is suitable for use in a wide range of applications including switching converters, power amplifiers, and RF amplifier designs. It also has a low on-resistance and a good reverse current leakage rating, making it suitable for both high- and low-current applications.

The NDS9400A has a maximum continuous drain-source current rating of 40A and a maximum peak current of 100A. Its operating temperature range is between -55°C and 200°C. Other features include a high transient drain current up to 200A, a lowest switch-on resistance of less than 0.01Ω and an internal snubber diode.

The NDS9400A working principle is quite simple and can be described as follows. When the gate voltage is applied, it attracts electrons from the source terminal and forms a channel between the source and the drain. This channel is referred to as the depleted region and forms the basis of the switch. When the gate voltage is increased, the channel width increases, allowing more current to travel through the transistor. Similarly, when the gate voltage is decreased, the channel width reduces, reducing the current flow. This is the main operation principle of the NDS9400A.

The NDS9400A is a versatile transistor which is used in a variety of applications including power systems, RF devices, and industrial control systems. It can be used for power devices such as switching converters, power amplifiers, and RF amplifier designs. It is also suitable for industrial control systems where its low on-resistance and good reverse current leakage rating make it an attractive choice. Other applications include voltage regulator modules, motor controls, and low-power switching.

In conclusion, the NDS9400A is a single field-effect transistor that is suitable for a wide range of applications. It has a wide operating temperature range, low on-resistance, high transient drain current up to 200A, and a maximum peak current rating of 100A. Its working principle is based on the formation of a depleted region between the source and the drain when a gate voltage is applied. It is used in power systems, RF devices, and industrial control systems and has a wide range of applications such as power converters, power amplifiers, RF amplifiers, and motor controls.

The specific data is subject to PDF, and the above content is for reference

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