NDS9958 Allicdata Electronics

NDS9958 Discrete Semiconductor Products

Allicdata Part #:

NDS9958TR-ND

Manufacturer Part#:

NDS9958

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 20V 3A 8-SOIC
More Detail: Mosfet Array N and P-Channel 20V 3.5A 900mW Surfac...
DataSheet: NDS9958 datasheetNDS9958 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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NDS9958 is one of the most popular powerfield transistors in the market today. It is an efficient and reliable transistor for power applications. The NDS9958 features high current carrying capacity and low power dissipation. It has a wide operating temperature range and is suitable for use in any type of application. It is a three-terminal device which has a discrete power supply. It is often used in a wide variety of power applications such as switching power supplies, inverters, and other power control systems.

The NDS9958 is an array of N-channel MOSFETs, typically used in switching power supplies. They are optimized for a variety of applications and provide high-speed switching performance and low on-resistance. The NDS9958 enables high-frequency operation, high-speed switching, and high efficiency. The array also provides protection against short-circuits. With its low on-resistance, the NDS9958 is highly efficient and helps reduce power dissipation.

The working principle of the NDS9958 is based on the fact that when a gate voltage is applied to one of the N-channel MOSFETs, it creates an electric field between the gate and drain, resulting in the flow of carriers from the gate to the drain. The result is a change in current from the source to the drain. This current can then be used to power the load by controlling the gate voltage. The gate voltage can also be used to control the current flow in the MOSFET and thus, provide a direct power control for the load.

The NDS9958 is highly reliable and efficient, which makes it ideal for many applications. It is suitable for use in switching power supplies, inverters, and many other power control systems. It is suitable for operation over a wide range of temperatures and provides high-speed switching performance. In addition, it is protected against short-circuits, which helps to increase its reliability.

The NDS9958 is a highly efficient and reliable powerfield transistor that is suitable for many applications. It has a high current carrying capacity and low power dissipation and is suitable for use in any type of application. It is a three-terminal device which has a discrete power supply. It is often used in a wide variety of power applications such as switching power supplies, inverters, and other power control systems. The array provides tight control of the current flow as it has very low on-resistance.

The specific data is subject to PDF, and the above content is for reference

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