NDS9953A Discrete Semiconductor Products |
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Allicdata Part #: | NDS9953ATR-ND |
Manufacturer Part#: |
NDS9953A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 30V 2.9A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 2.9A 900mW Sur... |
DataSheet: | NDS9953A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 10V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The NDS9953A is a three-channel, monolithic, high-voltage, silicon drift avalanche-enhanced insulated gate bipolar transistor array manufactured by National Semiconductor. It is designed for use in automotive and automotive-related applications. The NDS9953A is able to supply high currents and protect against potential problems in harsh automotive conditions. It is able to adapt to wide temperature ranges for reliable operation in extreme conditions.
The NDS9953A consists of three independent high-voltage insulated gate bipolar transistors (IGBTs) in a single package. Each IGBT contains an insulated gate, a channel, a source, a drain, and a body region. The IGBTs are capable of carrying currents in excess of 5A and blocking voltages up to 5,000 V. The NDS9953A also provides electrostatic discharge (ESD) protection.
The NDS9953A is designed to operate at high temperatures and can survive temperatures up to 150C. It is also able to maintain its junction temperature at less than 100C with 5A of applied current. Furthermore, it features reverse bias protection to guard against the temporary failure of power rails.
The NDS9953A is best suited for automotive applications such as automotive motor drives and automotive motor protection circuits. It can also be used in other applications, such as DC-DC converters, high-voltage power supplies, UPS systems, and high-power inverters.
The NDS9953A\'s working principle is based on the fact that an insulated gate bipolar transistor (IGBT) is an element of a PNP transistor. When voltage is applied to the gate of the IGBT, an electric field is generated that causes electrons to move from the source region to the drain region. This movement of electrons causes a current to flow, allowing the IGBT to act as a switch. When the IGBT is turned on, the current flows through it and the current is allowed to pass.
In addition to its switching function, the NDS9953A is also able to provide current protection. The IGBT has a maximum current rating of 5 A, and when the current exceeds this limit, the IGBT shuts off and prevents further current from passing through it. This way, it can protect the circuit from potential damage due to excessive current.
The NDS9953A is a versatile device that can be used in a variety of automotive and automotive-related applications. It is able to operate in extreme conditions, protect against potential damage due to excessive current, and provide ESD protection. With its high-voltage capabilities and its ability to adapt to wide temperature ranges, the NDS9953A is an ideal choice for automotive applications.
The specific data is subject to PDF, and the above content is for reference
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