NDS9948 Discrete Semiconductor Products

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The NDS9948 is an array of 48 N-Channel Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) providing up to 16 V breakdown voltage and with low drain source on-resistance. The NDS9948 is designed especially for applications where high performance and compact size are needed. The NDS9948 has an integrated design with a wide dynamic range and flexible operating modes, making it ideal for a variety of high current applications, including switching, power conversion, and power management.

Features and Benefits

The NDS9948 features a high-speed operation, superior thermal stability, and increased reliability. It also offers several unique features, such as low gate charge and high output power handling capability. Some of the other features and benefits of the NDS9948 include:

• Low on-resistance and on-resistance flatness
• High breakdown voltage
• Very low threshold voltage variation with temperature
• Good linearity
• Low gate charge
• Current sensing resistor to monitor the amount of current passing through the MOSFETs
• Optimized for high input, output and transient voltages
• Integrated circuit protection, including ESD and voltage clamping

Applications

The NDS9948 is suitable for a variety of different applications, including switching, power conversion, and power management. The NDS9948 is most often used as a general purpose MOSFET array for low-frequency switching applications, such as DC-DC converters, AC to DC rectifiers, switched power supplies, and power factor correction. It can also be used in microprocessors, PLCs and battery monitoring systems, as well as AC motor speed control and signal conditioning. Additionally, the NDS9948 can be used for signal conditioning in digital signal processing applications.

Working Principle

The NDS9948 consists of 48 N-channel MOSFETs, arranged in an array. When a gate voltage is applied, each MOSFET will turn-on and a current will start to flow through the drain-source. The gate voltage must remain higher than the threshold voltage in order for the MOSFET to remain in the "on" state. The MOSFETs have a low on-resistance, which results in a low input-output voltage drop, allowing more current to be drawn. Additionally, the low gate charge reduces switching losses and improves the efficiency.The NDS9948 also utilizes a built-in current sensing resistor to monitor the amount of current passing through the MOSFETs. As the current rises, the voltage across the resistor also rises, which helps to protect the MOSFETs from over-current conditions.The NDS9948 also offers protection against ESD and voltage clamping, which helps to protect the device from damage due to electrostatic discharge or other over-voltage conditions. Additionally, the NDS9948 offers low operating temperature, temperature cycling, and integrated temperature protection.

Conclusion

Overall, the NDS9948 is an ideal choice for applications that require high performance and compact size. The NDS9948 offers a wide range of features, including low on-resistance, high breakdown voltage, a wide dynamic range, and low gate charge. Additionally, the integrated circuit protection helps to protect the device from damage due to ESD and over-voltage conditions. The NDS9948 can be used for a variety of different applications, including switching, power conversion, and power management.

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