Allicdata Part #: | NDS9430A-ND |
Manufacturer Part#: |
NDS9430A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 5.3A 8-SOIC |
More Detail: | P-Channel 20V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | NDS9430A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 5.3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The NDS9430A is a type of enhancement-mode power MOSFET (also known as an IGBT or insulated-gate bipolar transistor). It is a single, N-channel MOSFET device, commonly used in applications requiring high power and/or high voltage. It is available in multiple packaging options, including TO-220 and D-PAK, making it suitable for a variety of products and applications requiring a discreet or heavily customised form of packaging.
The NDS9430A is based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) architecture, and works by allowing current to flow when a voltage is applied across its two terminals. The MOSFET is a unipolar device which contains an insulated "gate" between the source and drain electrodes. The insulated gate is able to modulate the conduction of carriers (electrons) between the source and drain electrodes by using a small control voltage. This allows electrons to fill the space between the gate and the source and drain, thus resulting in a current flow.
The NDS9430A uses this principle for its operation in switching circuits, providing excellent power efficiency. The device has a low on-resistance of 2.5 ohms, which allows it to effectively conduct large amounts of current with minimal power loss. Additionally, the NDS9430A has a breakdown voltage of 60V, meaning that it can handle high voltages for such a small package. This makes it ideal for a variety of applications, such as high-current DC/DC converters, high power motor control, and high voltage power supplies.
The NDS9430A\'s combination of low on-resistance, high breakdown voltage, and small size also makes it well-suited for use in battery-powered applications such as laptops, cell phones, and other portable devices. The low on-resistance ensures that the device consumes minimum power when in use, leading to improved battery life, while the small size enables manufacturers to create smaller and lighter products. Its high breakdown voltage also ensures that it can handle the voltages generated by the battery without any issues.
The NDS9430A is also an ideal choice for circuits requiring high switching speed. Its ability to quickly and efficiently conduct current makes it capable of switching high loads on and off at stunning speeds, making it suitable for uses such as motor control and AC/DC power conversion. The small package size also allows for faster signal transmission, further improving its switching capabilities.
In conclusion, the NDS9430A is an ideal choice for applications requiring high voltage, high current, or high switching speed. Its excellent combination of low on-resistance, high breakdown voltage, and small package size make it an ideal device for battery-powered portable devices, motor control, and high-power converters. Its high switching speed and efficient current conduction also make it well suited for a variety of other applications.
The specific data is subject to PDF, and the above content is for reference
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