NDS9955 Discrete Semiconductor Products |
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Allicdata Part #: | NDS9955TR-ND |
Manufacturer Part#: |
NDS9955 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 50V 3A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 50V 3A 900mW Surfa... |
DataSheet: | NDS9955 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 345pF @ 25V |
Power - Max: | 900mW |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The NDS9955 is an enhancement-mode (normally-off) n-channel power field effect transistor (FET) array with logic-level gate thresholds. This device is made up of monolithic vertical DMOS structures for use in multiple high side and/or low side power switching of loads including Solenoids, relays, motors and lamps. The NDS9955 features an on- resistance (Rds on ) from 5mΩ to 9mΩ dependent on the gate drive and current.
The NDS9955 features a number of features which enable its use in both high side and low side switching applications. The first is its logic-level gate threshold, meaning the gates are functional at power supply voltages of up to 10 volts. This allows the device to be used in a variety of switching applications as it is not limited to low source/sink voltages.
The NDS9955 also features high side / low side switching capability, meaning it can be used as either a high side or low side switch in a circuit. This allows it to be used in a range of applications, including multi-transistor switching, boiler and switching power supplies. In addition, its low on-resistance and high current capability make it well suited for use in Power Management and Motor Control circuits.
One of the most important features of the NDS9955 is the full-packaged frame. This is the metal frame which surrounds the center of the chip, and acts as a substitute for a bond wire or lead frame. By encapsulating the entire chip, it means that the device is more reliable and easier to handle than if it were mounted on a lead frame.
The NDS9955 also has a number of safety features which make it suitable for a number of applications. The isolation features on the device reduce the risk of electric shock or fire in the event of an failure, while the voltage and current protection introduce the additional layer of safety.
The NDS9955 works by applying a logic-level gate signal to the device, which is then amplified by the source and sink currents, creating an attractive force between the gate and drain/source terminals. This creates a connection between the drain and source terminals, allowing current to flow.
In operation, the voltage at the drain/source will be dependent on the voltage at the gate terminal. This means that the output signal can be modulated by controlling the gate voltage. For example, by increasing the voltage at the gate terminal, the current through the device will be increased, thus increasing the output voltage.
The NDS9955 can be used in a variety of applications, from multi-transistor switching, to boiler and switching power supplies, to motor control circuits. Its low on-resistance, easy handling and safety features make it suitable for use in these applications.
The specific data is subject to PDF, and the above content is for reference
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