NDS9936 Discrete Semiconductor Products |
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Allicdata Part #: | NDS9936TR-ND |
Manufacturer Part#: |
NDS9936 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 5A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 5A 900mW Surfa... |
DataSheet: | NDS9936 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 525pF @ 15V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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NDS9936 is a new kind of dual-gate MOSFET-based transistor array with a maximum power rating of 175mW and a maximum drain-source voltage of 3.6V. It is designed for use in audio, video, and computer power applications. The device is a combination of two N-channel MOSFETs in one package, which can produce a wide range of gain and power characteristics when used together. It is also suitable for switching applications due to its fast switching times.
An NDS9936 features two input-gates and three output-drains, which provide sufficient load capability. The input gates are connected together and are driven together in order to provide a gain control. The drain-source current is controlled by the gate-source voltage applied to each gate in the array, thus providing a wide gain range. The maximum power rating of the NDS9936 is 175mW, which enables it to handle higher power levels than other similar devices.
When used for power or switching applications, the NDS9936 is connected in a dual-gate MOSFET configuration, which is capable of producing both symmetrical and asymmetrical output characteristics. The two gates enable the use of different gate voltages to create different gains and power levels. When connected in a symmetrical configuration, the two gates are driven simultaneously to provide a single, constant output voltage and current. In an asymmetrical configuration, the two gates are driven either independently or with different gate voltages creating a split output between the two gates. This configuration allows for variably controlling the gain and power levels.
The power ratings of the NDS9936 array are relatively high compared to other dual-gate MOSFET transistor arrays. This enables it to handle higher power levels when used in audio, video and computer power applications. The off state drain-source voltage is also lower than other similar devices, making it suitable for switching applications as well.
The NDS9936 also features a low input capacitance, which reduces power dissipation and enables faster switching times. This makes the device suitable for high-speed applications such as those found in digital circuits and data processing. Its low input capacitance also reduces ringing and overshoot when used in high speed data lines, enabling better signal integrity.
Overall, the NDS9936 is a versatile dual-gate MOSFET array which can be used for a variety of applications including audio, video and computer power, and high speed data processing. Its two input-gates and three output-drains provide sufficient load capability and enable a wide range of gain and power levels. Its low input capacitance reduces power dissipation and enables faster switching times, making it suitable for high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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