NDS9957 Discrete Semiconductor Products |
|
Allicdata Part #: | NDS9957TR-ND |
Manufacturer Part#: |
NDS9957 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 2.6A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 2.6A 900mW Sur... |
DataSheet: | NDS9957 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 30V |
Power - Max: | 900mW |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NDS9957 is a power MOSFET array, which is made up of eight individually controlled power MOSFETs in an integrated package. It is designed to replace four separate dual N-Channel MOSFETs and two load switches. The device can provide better performance by providing an easier way to control higher currents and voltages.
The NDS9957 has a variety of application fields, ranging from discrete to regulated applications. It is extensively used in DC/DC converters, static switches, high current power supplies and automotive applications. It is also used in many consumer electronics, such as mobile phones, laptops and tablets.
The device has a unique structure and leverages a few key elements to drive its wide range of applications. The NDS9957 has a body-diode shielded topology, which provides improved thermal performance and betters switching efficiency. This topology also provides improved reverse current protection and additional EMI immunity.
The device also has independent gates for each MOSFET, which allows for better control of different channels. This allows for better running speed and provides better protection against short-circuits and hot-swapping. The device also has built-in voltage supervisors, which can help control the MOSFETs based on the input and output voltages.
NDS9957 is based on the basic principles of Field Effect Transistors (FETs). FETs are three-terminal devices, which can act as either an amplifying or switching device. They work by controlling the flow of electrons through a channel in the semiconductor material. The NDS9957 utilizes the FETs in an array package and provides a convenient way to control and manage multiple channels.
The device\'s main working principle is based on the gate-source voltage. In order to activate the NDS9957, a high voltage must be applied to the gate voltage, which will in turn generate a channel in the channel region of the device. This channel is used to channel the electrons through the device. The voltage of the sources and drains can also be used to control the current and resistance in the channel.
The NDS9957 is an ideal solution for higher current applications that require improved thermal performance and switching efficiency. Its unique integrated package and independent gates make it a great choice for applications such as DC/DC converters, static switches, and high current power supplies. It is also useful in many consumer electronics, such as mobile phones, laptops and tablets.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NDS9410A | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 7.3A 8-SO... |
NDS9400A | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 3.4A 8-SO... |
NDS9405 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 4.3A 8-SO... |
NDS9430 | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 5.3A 8-SO... |
NDS9435A | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 5.3A 8-SO... |
NDS9430A | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.3A 8-SO... |
NDS9407_G | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITP-Chann... |
NDS9925A | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 4.5A 8-S... |
NDS9933A | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 2.8A 8-S... |
NDS9936 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 5A 8-SOI... |
NDS9955 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 50V 3A 8-SOI... |
NDS9956A | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 3.7A 8-S... |
NDS9957 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 2.6A 8-S... |
NDS9959 | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 50V 2A 8-SOI... |
NDS9933 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 3.2A 8-S... |
NDS9947 | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 3.5A 8-S... |
NDS9953A | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 30V 2.9A 8-S... |
NDS9942 | ON Semicondu... | -- | 1000 | MOSFET N+P 20V 2.5A 8-SOI... |
NDS9943 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 3A/2.8A... |
NDS9958 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 3A 8-SO... |
NDS9407 | ON Semicondu... | 0.32 $ | 1000 | MOSFET P-CH 60V 3A 8-SOIC... |
NDS9945 | ON Semicondu... | 0.43 $ | 2500 | MOSFET 2N-CH 60V 3.5A 8-S... |
NDS9948 | ON Semicondu... | 0.27 $ | 1000 | MOSFET 2P-CH 60V 2.3A 8-S... |
NDS9952A | ON Semicondu... | 0.34 $ | 1000 | MOSFET N/P-CH 30V 8SOICMo... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...