NDS9957 Allicdata Electronics

NDS9957 Discrete Semiconductor Products

Allicdata Part #:

NDS9957TR-ND

Manufacturer Part#:

NDS9957

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 60V 2.6A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 2.6A 900mW Sur...
DataSheet: NDS9957 datasheetNDS9957 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 30V
Power - Max: 900mW
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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NDS9957 is a power MOSFET array, which is made up of eight individually controlled power MOSFETs in an integrated package. It is designed to replace four separate dual N-Channel MOSFETs and two load switches. The device can provide better performance by providing an easier way to control higher currents and voltages.

The NDS9957 has a variety of application fields, ranging from discrete to regulated applications. It is extensively used in DC/DC converters, static switches, high current power supplies and automotive applications. It is also used in many consumer electronics, such as mobile phones, laptops and tablets.

The device has a unique structure and leverages a few key elements to drive its wide range of applications. The NDS9957 has a body-diode shielded topology, which provides improved thermal performance and betters switching efficiency. This topology also provides improved reverse current protection and additional EMI immunity.

The device also has independent gates for each MOSFET, which allows for better control of different channels. This allows for better running speed and provides better protection against short-circuits and hot-swapping. The device also has built-in voltage supervisors, which can help control the MOSFETs based on the input and output voltages.

NDS9957 is based on the basic principles of Field Effect Transistors (FETs). FETs are three-terminal devices, which can act as either an amplifying or switching device. They work by controlling the flow of electrons through a channel in the semiconductor material. The NDS9957 utilizes the FETs in an array package and provides a convenient way to control and manage multiple channels.

The device\'s main working principle is based on the gate-source voltage. In order to activate the NDS9957, a high voltage must be applied to the gate voltage, which will in turn generate a channel in the channel region of the device. This channel is used to channel the electrons through the device. The voltage of the sources and drains can also be used to control the current and resistance in the channel.

The NDS9957 is an ideal solution for higher current applications that require improved thermal performance and switching efficiency. Its unique integrated package and independent gates make it a great choice for applications such as DC/DC converters, static switches, and high current power supplies. It is also useful in many consumer electronics, such as mobile phones, laptops and tablets.

The specific data is subject to PDF, and the above content is for reference

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