NDS9430 Discrete Semiconductor Products |
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Allicdata Part #: | NDS9430TR-ND |
Manufacturer Part#: |
NDS9430 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 5.3A 8-SOIC |
More Detail: | P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | NDS9430 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 5.3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 528pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The NDS9430 is a high-performance, ultra-low capacitance 2.0A Schottky barrier rectifier MOSFET. It is a functional and cost-effective solution for rectifying power in both consumer and enterprise consumer applications. This MOSFET is capable of withstanding voltages up to 30V and external currents up to 2A. It is especially suitable for high-frequency switching applications.
The NDS9430 is designed to minimize the on-state resistance and capacitance of a pass transistor to minimize EMI and minimize power dissipation. Additionally, it has a low turn-on voltage, low gate charge and a low thermal resistance, making it an ideal choice for high-speed, high-current switching applications.
The NDS9430 is comprised of three layers: the top layer is the P-type transistors, the middle layer consists of N-type transistors and the bottom layer which comprises the source and the drain electrodes. The core function of the device is the formation of a Schottky barrier rectifier which reduces the voltage drop across the device and minimizes power dissipation. The internal junction of the P-transistor and the N-transistor forms the active region which permits reverse conduction.
The NDS9430 is an extremely versatile device. It can be used in many different applications, ranging from low-frequency rectification, DC power supplies, high-frequency switching, power amplifiers, and more.
In low-frequency circuit applications, such as rectification and DC power supplies, the device can be used to provide dynamic switching and voltage regulation. It can also be used to regulate AC voltages into DC voltages for single-stage power supplies.
In high-frequency switching applications, such as power amplifiers and switching power supplies, the NDS9430 is ideal for its low on-resistance and fast switching time. This device can also be used in power control circuits as a low-voltage, low-power switch.
The NDS9430 is an excellent choice for power control applications. Its low on-resistance, switching speed, and input capacitance drastically reduce power dissipation, which can lead to improved efficiency in switching power supplies. Additionally, it is an ultra low-capacitance device (less than 0.05 pF) which greatly reduces EMI interference.
The NDS9430 is a cost-effective solution that can provide many advantages in both consumer and enterprise applications. Its low power consumption, low noise, high switching speed, and low input capacitance make it ideal for high-performance, low-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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