NDS9952A Discrete Semiconductor Products |
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Allicdata Part #: | NDS9952ATR-ND |
Manufacturer Part#: |
NDS9952A |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 30V 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 3.7A, 2.9A 900mW ... |
DataSheet: | NDS9952A Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.30033 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A, 2.9A |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 10V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The NDS9952A is a semiconductor device that belongs to the family of field-effect transistors (FETs). It is an array of metal–oxide–semiconductor FETs (MOSFETs) that have metal gates, which are electrically insulated from the conducting channels of the channel region. The composition of the channel region determines the type of FET and its application field.
The NDS9952A was designed for the express purpose of providing a high-current and low-voltage analog switch for power management applications. It is ideal for applications where the device needs to switch a large amount of current under low voltage conditions. It is a low-frequency device, with a maximum cutoff frequency of 750MHz, which makes it suitable for use in low-frequency applications such as motor control and power distribution.
The NDS9952A features a low on-resistance, typically 18Ω. This low resistance allows it to switch large currents more efficiently, reducing power losses in the system. It can switch currents up to 3A and has a breakdown voltage of 60V, making it an ideal solution for power management applications. The breakdown voltage is the maximum voltage at which the device can remain in the off-state without any adverse effects.
The working principle of the NDS9952A is based on a MOSFET array. The array consists of 16 transistors in a single compact package. Each of the transistors is connected in series, with each in parallel with a pair of gates. When the gates are driven with a logic signal at the appropriate voltage, the transistor array is placed into either the on-state or the off-state dependent on the input signal. When the transistor array is placed into the on-state, a low resistance is created between the drain and the source, which allows current to flow. When the transistor array is placed into the off-state, the transistor array presents a high resistance between the drain and the source, blocking current flow. In this way, the NDS9952A can be used to turn on and off the output signal of a logic circuit.
In summary, the NDS9952A is an array of MOSFETs that can be used to provide a high-current and low-voltage analog switch. It is ideal for power management applications and is able to switch currents up to 3A with a breakdown voltage of 60V. The transistor array is controlled by input logic signals, placing it into either the on- or off-state. This low-frequency device is an ideal solution for motor control and power distribution applications.
The specific data is subject to PDF, and the above content is for reference
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