NSBC114TF3T5G

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The NSBC114TF3T5G bipolar junction transistor (BJT) is a single, pre-biased device. It is a NPN-type device that is used as an amplifier, switch and / or oscillator, as well as for wave signaling and power switching. The NSBC114TF3T5G is a general-purpose, low-power transistor. Its collector-emitter breakdown voltage is 35 V at a current of 1 mA, and its operating junction temperature range is -55°C to +155°C. Its package is a surface mount SOT-563, ideal for automated assembly.

The NSBC114TF3T5G operates in three basic modes:

• Cutoff: In this mode, the transistor is turned off, as the base-emitter voltage (VBE) is below its turn-on threshold voltage (VTH).
• Saturation: In this mode, the transistor is turned on, as the base-emitter voltage (VBE) is greater than its turn-on threshold voltage (VTH).
• Active: In this mode, the collector-emitter voltage (VCE) is between the two previous values.

The working principle of the NSBC114TF3T5G involves the application of an electric signal to the base electrode of the device. This controls the transfer of current between the collector and emitter electrodes, and allows the transistor to switch or amplify the signal.

The NSBC114TF3T5G is suitable for a wide range of applications, including motor control, signal processing, industrial automation, vehicle electronics and lighting applications. As a small, low-power transistor, it can be used in a wide variety of applications where space is limited, such as in mobile phones and other handheld devices.

In summary, the NSBC114TF3T5G is a single, pre-biased, NPN-type transistor suitable for a wide range of applications. Its operating principle involves the application of an electric signal to the base electrode, which controls the transfer of current between the collector and emitter electrodes, allowing amplification and/or switching of a signal. Its small size and low power make it ideal for use in a range of compact applications.

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