NSBC143TPDXV6T5G Allicdata Electronics
Allicdata Part #:

NSBC143TPDXV6T5G-ND

Manufacturer Part#:

NSBC143TPDXV6T5G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN/PNP SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: NSBC143TPDXV6T5G datasheetNSBC143TPDXV6T5G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NSBC143TPDXV6T5G is a Transistor Array Pre-Biased bipolar junction transistor (BJT). It is designed to provide a wide range of features and applications in the electronics industry requiring low-noise, high-gain, high-efficiency, and low-power operation.

The NSBC143TPDXV6T5G is an integrated, six-transistor array configuration. It consists of two n-channel MOSFET and four complementary p-channel MOSFET connected in parallel in a common-source configuration. Each transistor has its own independent bias circuitry to ensure reliable operation at all biases needed by the system. The array is designed to provide excellent gain and low noise performance, even when operating at high temperatures and high signal frequencies.

The NSBC143TPDXV6T5G is ideal for use in systems that require low-noise, high-gain, and low-power Simultaneous Amplitude and Frequency Modulation (SAFM) operation. It is also relevant for many applications requiring high-efficiency Class-D amplifiers, where it can provide superior power efficiency, lower power dissipation, and low-noise operation. Additionally, it can be used in PA systems, D/A converters, S-band transmitters and receivers, power amplifiers, and many consumer applications.

The working principle of the NSBC143TPDXV6T5G is based on bipolar junction transistors (BJTs) acting as amplifiers. BJTs are active semiconductor devices that employ a junction of two separate types of semiconductor materials (n-type and p-type) as they conduct current. The most common application of BJTs is in switching and amplifying circuits, where BJTs are used to switch and amplify Analog or Digital Signals. The biasing circuitry of the NSBC143TPDXV6T5G is designed to ensure that the transistor is biased at the proper potential to allow for reliable switching and amplification. When bias applied to the transistor array, its purpose is to ensure that the junction is able to pass current and to control the output current.

The NSBC143TPDXV6T5G is designed to provide great performance and reliability while being able to withstand harsh operating environments. Its low noise design, high-gain characteristics, and low-power operation make it an ideal choice for many applications when used with the right external components. Its versatility makes it a great choice for many applications, including digital and analog signal processing, instrumentation, automotive, and audio.

The specific data is subject to PDF, and the above content is for reference

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