NSBC113EDXV6T1 Allicdata Electronics
Allicdata Part #:

NSBC113EDXV6TOSTR-ND

Manufacturer Part#:

NSBC113EDXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSBC113EDXV6T1 datasheetNSBC113EDXV6T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Series: --
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NSBC113EDXV6T1 is a pre-biased transistors array composed of three individual transistors integrated into one single chip. Developed by NXP Semiconductor, these single chips provide excellent performance and ease of use in a wide range of applications.

Application Field

The NSBC113EDXV6T1 is ideal for use in a wide range of applications. It is suitable for audio and general signal processing, signal conditioning and filter circuits, as well as analog amplifiers, secure switching and signal splitting. As it can provide an extended frequency range, it is also suitable for radio systems such as GPS and GSM. In addition, it is well suited for use in digital systems such as communication and data transfer.

Working Principle

The NSBC113EDXV6T1 relies on three separate NPN type bipolar transistors operating in a pre-biased configuration. This configuration allows for fast switching and enhanced current gain with lower power dissipation. The three transistors feature excellent electrical characteristics and are the ideal solution for high speed and high current applications. The total current gain ranges from 180 to 250, making it ideal for use in medium-to-high current applications.

The integrated circuit features a high voltage output, which allows it to be used in applications that demand a higher input/output differential. The transistors allow for a high slew rate, which is essential for high-performance switching and signal conditioning applications. In addition, the device\'s low on-state voltage drop is ideal for applications requiring low power loss. Finally, the integrated circuit also features a low output capacitance, which is essential for handling high frequency signals.

Conclusion

The NSBC113EDXV6T1 is a pre-biased transistors array comprised of three individual transistors integrated into one single chip. With excellent electrical characteristics and an extended frequency range, it is suitable for use in a wide range of applications, including audio and general signal processing, signal conditioning and filter circuits, analog amplifiers, secure switching and signal splitting, digital systems such as communication, and radio systems such as GPS and GSM. Its high voltage output and low on-state voltage drop allow it to handle high frequency signals without power loss.

The specific data is subject to PDF, and the above content is for reference

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