| Allicdata Part #: | NSBC114TDXV6T5GOS-ND |
| Manufacturer Part#: |
NSBC114TDXV6T5G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS 2NPN PREBIAS 0.5W SOT563 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
| DataSheet: | NSBC114TDXV6T5G Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
| Base Part Number: | NSBC1* |
| Supplier Device Package: | SOT-563 |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | -- |
| Resistor - Base (R1): | 10 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The type of transistor known as NSBC114TDXV6T5G is a special type of transistor array that falls into the category of pre-biased bipolar transistors or BJTs. It has become a major player in the technology and engineering industries due to its ability to be used for a variety of purposes. This article will discuss the application fields and working principles of the NSBC114TDXV6T5G transistor array.The NSBC114TDXV6T5G is a pre-biased Bipolar Junction Transistor (BJT) array. It consists of two p-type base layers sandwiched between two n-type base layers. Each layer acts as an individual transistor, allowing the array to operate as an inverting logic switch. This makes it extremely useful for data transmission and signal routing.The NSBC114TDXV6T5G is typically used in linear and digital control applications, due to its good matching characteristics. In addition, it can also be used in switching applications, as its built-in over-voltage protection make it a reliable choice. This transistor array also features higher operating frequencies, better phase accuracy and improved temperature stability. This makes them suitable for a wide array of applications, including amplification, frequency conversion, signal processing and power conversion.The working principle of the NSBC114TDXV6T5G is quite simple. It is essentially a switch, made up of a pair of p-n junction diodes. When the transistor is forward biased, it allows current to flow from the collector region to the base region. When the transistor is reverse biased, the current does not flow. This allows the transistor to act as an on/off switch, allowing it to be used for signal processing and data transmission.In terms of application fields, the NSBC114TDXV6T5G can be used in a variety of industries. It is commonly used in power supplies, motor control systems and LED lighting systems. Other applications include high-voltage switching systems, security systems, medical instruments and data acquisition systems.In conclusion, the NSBC114TDXV6T5G transistor array is a versatile component that is suitable for a wide array of applications. It is comprised of two p-type base layers, sandwiched between two n-type base layers, which allows it to operate as an inverting logic switch. It is typically used in linear and digital control applications, due to its good matching characteristics and higher operating frequencies. Its wide array of applications make it a promising component in the technology and engineering industries.The specific data is subject to PDF, and the above content is for reference
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NSBC114TDXV6T5G Datasheet/PDF