NSBC115EPDXV6T1G Allicdata Electronics
Allicdata Part #:

NSBC115EPDXV6T1G-ND

Manufacturer Part#:

NSBC115EPDXV6T1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: SS SOT563 RSTR XSTR TR
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: NSBC115EPDXV6T1G datasheetNSBC115EPDXV6T1G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.04624
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 357mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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The NSBC115EPDXV6T1G is a part of the Arrays, Pre-Biased category of Bipolar Junction Transistors (BJT) devices. This device is often used in applications requiring very high current gain and excellent linearity. This device uses six individual NPN transistors connected in a series array configuration, with each transistor suitable for pre-biasing.

The working principle of the NSBC115EPDXV6T1G is based on the concept of current gain. In a BJT, current gain is determined by the ratio of the collector current to the base current. In this particular device, the current gain is increased to a much higher value due to the series array configuration, which allows for a much larger amount of current to flow through each transistor. This increased current, when combined with the pre-biasing potentials, results in a higher gain than is normally achieved in single transistor type BJTs.
The NSBC115EPDXV6T1G is a versatile device and can be utilized in various types of applications requiring high current gain and linearity. In digital systems, it can be used in high speed switching applications, while in analog systems, it can be used in signal amplifying and processing tasks. It is often used in medical equipment, aerospace components, and power supply systems. Additionally, it can be found in sensing and control systems in automotive and consumer electronics industries.
The NSBC115EPDXV6T1G has a wide operating temperature range, with a recommended range of -40 °C to +125 °C. It has a maximum collector current rating of 150 mA and a peak collector-emitter voltage rating of 1.8 V. This device also features a Collector-EmitterLeakage current rating of 100 nA and a Collector-Base Leakage current rating of 500 nA.
The NSBC115EPDXV6T1G is a reliable and efficient Bipolar Junction Transistor, which can be used in a range of applications requiring excellent current gain and linearity. Its series array configuration and pre-biasing capabilities increase its overall performance level and make it an ideal choice in these applications.

The specific data is subject to PDF, and the above content is for reference

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