Allicdata Part #: | NSBC115EPDXV6T1G-ND |
Manufacturer Part#: |
NSBC115EPDXV6T1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | SS SOT563 RSTR XSTR TR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSBC115EPDXV6T1G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.04624 |
Specifications
Series: | Automotive, AEC-Q101 |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 357mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Description
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The NSBC115EPDXV6T1G is a part of the Arrays, Pre-Biased category of Bipolar Junction Transistors (BJT) devices. This device is often used in applications requiring very high current gain and excellent linearity. This device uses six individual NPN transistors connected in a series array configuration, with each transistor suitable for pre-biasing.
The working principle of the NSBC115EPDXV6T1G is based on the concept of current gain. In a BJT, current gain is determined by the ratio of the collector current to the base current. In this particular device, the current gain is increased to a much higher value due to the series array configuration, which allows for a much larger amount of current to flow through each transistor. This increased current, when combined with the pre-biasing potentials, results in a higher gain than is normally achieved in single transistor type BJTs.
The NSBC115EPDXV6T1G is a versatile device and can be utilized in various types of applications requiring high current gain and linearity. In digital systems, it can be used in high speed switching applications, while in analog systems, it can be used in signal amplifying and processing tasks. It is often used in medical equipment, aerospace components, and power supply systems. Additionally, it can be found in sensing and control systems in automotive and consumer electronics industries.
The NSBC115EPDXV6T1G has a wide operating temperature range, with a recommended range of -40 °C to +125 °C. It has a maximum collector current rating of 150 mA and a peak collector-emitter voltage rating of 1.8 V. This device also features a Collector-EmitterLeakage current rating of 100 nA and a Collector-Base Leakage current rating of 500 nA.
The NSBC115EPDXV6T1G is a reliable and efficient Bipolar Junction Transistor, which can be used in a range of applications requiring excellent current gain and linearity. Its series array configuration and pre-biasing capabilities increase its overall performance level and make it an ideal choice in these applications.
The specific data is subject to PDF, and the above content is for reference
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