NSBC114YDXV6T1G Allicdata Electronics

NSBC114YDXV6T1G Discrete Semiconductor Products

Allicdata Part #:

NSBC114YDXV6T1GOSTR-ND

Manufacturer Part#:

NSBC114YDXV6T1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSBC114YDXV6T1G datasheetNSBC114YDXV6T1G Datasheet/PDF
Quantity: 4000
1 +: $ 0.05000
10 +: $ 0.04850
100 +: $ 0.04750
1000 +: $ 0.04650
10000 +: $ 0.04500
Stock 4000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NSBC114YDXV6T1G is a transistor array circuit for a number of different applications. It combines two PNP transistors and two NPN transistors in a single device. The array contains both transistors and diodes, and they are all connected in a single package. This transistor array is used in a variety of applications, including high-speed switching and linear amplification. It can also be used in low-power applications such as audio amplifiers, logic circuits, and digital signal processing. This device is an excellent choice for applications requiring high-speed switching and linear amplification.

The NSBC114YDXV6T1G is a pre-biased transistor array, which means that it is already configured for operation when it is purchased. It includes two PNP transistors and two NPN transistors, as well as several diodes. The package includes all of the components required to construct the circuit, eliminating the need to buy separate components. This transistor array is designed to operate at voltages ranging from 5V to 18V, with a maximum power dissipation of 500mW.

The NSBC114YDXV6T1G is designed to provide reliable performance in a variety of applications. It can be used in switching circuits, linear amplifiers, and low-power applications such as clocks and small radios. It can also be used in more complex circuit designs, such as those that require pulse-width modulation or phase-locked loops. The pre-biased configuration of the device makes it easy to implement complex circuit designs.

The NSBC114YDXV6T1G is based on the principle of transistor-diode logic, or TDL. This is a type of digital logic circuit in which diodes are used to switch between two transistors. This type of circuit is often used in switching applications, as it allows for the field-effect transistors to be biased by the voltage between the two transistors. The two transistors can then be switched on and off individually, enabling a wide range of switching applications.

The NSBC114YDXV6T1G can also be used in linear amplifiers, as the transistors can be used to both amplify and drive a signal. By connecting the emitters of the transistors together and connecting the collectors across the load, a high-power amplifier can be created. The transistors can be biased to allow a bias current to flow through the base, thus allowing the transistors to be used as an amplifier. This type of amplifier is reliable, efficient, and will require minimal external components.

The NSBC114YDXV6T1G transistor array is a versatile device that can be used in a variety of applications. It is an excellent choice for applications requiring high-speed switching, linear amplification, pulse-width modulation, and other complex circuits needing multiple transistors. With its pre-biased configuration, it is easy to implement complex circuit designs with minimal external components. The NSBC114YDXV6T1G is an excellent choice for any application requiring a reliable and efficient transistor array.

The specific data is subject to PDF, and the above content is for reference

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