Allicdata Part #: | NSBC143TPDXV6T1GOSTR-ND |
Manufacturer Part#: |
NSBC143TPDXV6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSBC143TPDXV6T1G Datasheet/PDF |
Quantity: | 8000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NSBC143TPDXV6T1G is a pre-biased array of bipolar junction transistors (BJT). It is an integrated circuit (IC) developed to reduce the voltage and thermal requirements of field-effect transistors (FET).
Its structure consists of six NPN transistors interconnected and pre-biased, which allows the user to obtain satisfactory switching performance with only one voltage source. The pre-biased transistors provide lower power dissipation and reduce thermal stress. Additionally, the use of this device avoids the need for external components for current biasing, which further reduces the design costs of the system.
Like other BJTs, the NSBC143TPDXV6T1G can function as an amplifier because of its ability to receive low-level input signals and amplify them. Furthermore, during operation, the pre-biased transistors can work as an analog switch, allowing a wide range of control signals to modify the conditions of detail circuits. If needed, the performance of the NSBC143TPDXV6T1G can be augmented by using additional external components.
The main application of the NSBC143TPDXV6T1G is in communication systems, such as cell phone and television transmitters. They are used to amplify the signal and switch between different circuits, providing the functionality necessary for transmission and reception. Additionally, this device can also be used to provide high frequency signals for negotiation protocols and emergency communication systems, since it is capable of working very quickly.
The main advantages of using pre-biased transistors for signal amplification and transmission are the reduced power dissipation and the lack of external components. Pre-biased transistors can be triggered very quickly and are energy efficient, contributing towards the design of energy-saving communication devices. Typical applications involve wireless communication systems, alarm systems, instrumentation and any other system that requires swift response.
In terms of working principle, the NSBC143TPDXV6T1G is composed of six NPN transistors interconnected in an array. Each transistor acts as a switch, allowing the control signal to pass through it and reach the other circuits. Each transistor is pre-biased in order to reduce the input voltage and repair the switching speed, which eliminates the need for additional components.
The NSBC143TPDXV6T1G is a highly efficient device, capable of delivering very accurate signals with low levels of power consumption. It is easy to use, because all that is required for proper operation are the necessary voltages and the control signal. Additionally, the array can be adapted for special applications if the user decides to include additional external components.
The specific data is subject to PDF, and the above content is for reference
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