NSBC144TF3T5G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NSBC144TF3T5G is a type of single, pre-biased, bipolar junction transistor (BJT) designed for use in various applications. It was designed by the American semiconductor manufacturer Biax Corporation and released in 1985. The device features a low minimum current gain (h_FE) of 45 and is rated for an operating voltage of up to 250V. The device is available in both through-hole and surface-mount packages, and is commonly used in industrial applications.

General Features

• Single, pre-biased, NPN bipolar junction transistor
• Low minimum gains (h_FE) of 45
• Rated for an operating voltage of up to 250V
• Through-hole and surface-mount packages available

Application Fields

The NSBC144TF3T5G is designed for use in various applications, particularly industrial ones. With its low minimum current gain of 45 and the ability to handle up to 250V, the device can be used for a variety of tasks such as switching, amplification, and protection.

The device can be used as a switching element for controlling the power to various electrical or electronic devices, or for amplifying signals in communications and audio equipment. Additionally, due to its low h_FE, the device can also be used to protect circuits from overloads and short circuits.

Working Principle

The NSBC144TF3T5G is a single, pre-biased, NPN bipolar junction transistor. A bipolar transistor consists of two p-n junctions formed by combining the three semiconductor materials: n-type, p-type, and depletion regions. When two different types of materials are connected together, they form a p-n junction, and the junction behaves like a diode. When a voltage is applied across the p-n junction, it will allow current to flow only in one direction: from the n-type material to the p-type material.

In a bipolar transistor, three p-n junctions are connected together, forming three terminals: the collector, the base, and the emitter. When a small current is applied to the base terminal, it switches a larger current from the collector to the emitter terminal. This phenomenon is known as current amplification and is used in various applications to control and amplify electrical signals.

The low minimum current gain (h_FE) of 45 for the NSBC144TF3T5G makes it particularly well suited for protecting circuits from overloads and short circuits. The device has a relatively low gain, meaning it will only allow a small current to flow through it in the absence of a base current. When a larger current is applied, the device will saturation and cut off the current, thus providing protection.

The specific data is subject to PDF, and the above content is for reference