NSBC143EPDP6T5G Allicdata Electronics
Allicdata Part #:

NSBC143EPDP6T5G-ND

Manufacturer Part#:

NSBC143EPDP6T5G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 254MW SOT963
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: NSBC143EPDP6T5G datasheetNSBC143EPDP6T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03762
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 339mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963
Description

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The NSBC143EPDP6T5G is an integrated device containing 6 pre-biased NPN transistors. It is used in many applications and is one of the most popular arrays of bipolar junction transistors (BJT), because of its robustness. This article will discuss the application field and working principle of the NSBC143EPDP6T5G.

The NSBC143EPDP6T5G is primarily used in automotive applications, such as for engine control, power amplifiers, and audio systems, and so on. This device can also be used for general switching applications. In addition, it can also be used in power supply circuits and in various monitoring functions.

The NSBC143EPDP6T5G pre-biased transistor array is a 6-bit device. It is based on the NPN transistor, which is a type of transistor in which the emitter-base junction is forward biased and the collector-base junction is reverse biased. This junction produces a current flow between the emitter and the collector and this current can be controlled. The NSBC143EPDP6T5G has a high current gain, which allows it to switch currents quickly, making it ideal for use in switching applications.

The working principle of the NSBC143EPDP6T5G is simple. It consists of 6 NPN transistors. The transistors are connected in an array with the collectors connected together and the emitters connected via resistors. When a voltage is applied, current is allowed to flow between the emitter and the collector, creating a current gain. The gain is determined by the size of the resistors and the sizes of the transistors. The transistor array can be configured in many different ways, allowing the user to control the current flow and the gain.

The NSBC143EPDP6T5G is an array of NPN transistors that has been pre-biased. This means that the transistors have been biased in order to provide a specific gain and current flow. This device is popular in automotive applications, as well as for general switching and power supply applications. The simple working principle of the array and its pre-biased configuration makes it a desirable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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